Presentation | 1996/7/24 A study on the edge junctions using PBCO families as the barrier layers Masahiro Horibe, Tadao Ohta, Akira Fujimaki, Hisao Hayakawa, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We have studied the electrical properties of edge junctions using PrBa_2Cu_3O_<7-x>(PBCO)-based materials having various carrier density as the barrier layers. Ca-doped PBCO(Ca_<0.5>Pr_<0.5>Ba_2Cu_3O_<7-x>,Ca-PBCO) was an overdoped version of PBCO which had Tc~20K. On the other hand, Ga-doped PBCO(PrBa_2Cu_<2.4>Ga_<0.6>O_<7-x>, PBCGO) was an underdoped version of PBCO which resistivity was higher than that of PBCO. The transport properties of junctions with PBCGO barrier layer were interpreted as tunneling via localized states. Furthermore, the IcRn products increased with decrease in the carrier density, and reached 4mV in the YBCO/PBCGO/YBCO junctions. The density of carriers or localized states in the barrier materials played an important role for the electrical properties of the junctions. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Ca-PBCO / PBCGO / Carrier density / Localized state |
Paper # | SCE96-14 |
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Conference Information | |
Committee | SCE |
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Conference Date | 1996/7/24(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Superconductive Electronics (SCE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | A study on the edge junctions using PBCO families as the barrier layers |
Sub Title (in English) | |
Keyword(1) | Ca-PBCO |
Keyword(2) | PBCGO |
Keyword(3) | Carrier density |
Keyword(4) | Localized state |
1st Author's Name | Masahiro Horibe |
1st Author's Affiliation | Department of Quantum Engineering, Nagoya University() |
2nd Author's Name | Tadao Ohta |
2nd Author's Affiliation | Department of Quantum Engineering, Nagoya University |
3rd Author's Name | Akira Fujimaki |
3rd Author's Affiliation | Department of Quantum Engineering, Nagoya University |
4th Author's Name | Hisao Hayakawa |
4th Author's Affiliation | Department of Quantum Engineering, Nagoya University |
Date | 1996/7/24 |
Paper # | SCE96-14 |
Volume (vol) | vol.96 |
Number (no) | 174 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |