Presentation 1996/7/24
Fabrication of SrTiO_3/YBa_2Cu_3O_<7-x> Heterostructure by Ion Beam Sputtering and Its Properties
T. Saito, X.Y. Cai, K. Usami, T. Kobayashi, T. Goto,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We investigated the properties of SrTiO_3/YBa_2Cu_3O_<7-x> heterostructurea by ion beam sputtering (IBS) in high oxygen pressure (~10^<-2> Torr). The leakage current characteristics were almost symmetric for different polarizations. A 400-nm-thick STO film deposited at 660℃ had low leakage current up to ±25V at 77K and 4.2K. The products ε_<γS>E_ and ε_<γD>E_ of a STO film deposited at 500℃ were about 2.2×10^8V/cm and 1.4×10^8V/cm, respectively. A 10-nm-thick YBCO film covered with the STO layer was not so degraded, therefore it was found that these structures are suitable for fabricating field effect devices.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) IBS / High T_C Superconductor / SrTiO_3 / Heterostructure / Dielectric Property / Field Effect
Paper # SCE96-10
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Conference Information
Committee SCE
Conference Date 1996/7/24(1days)
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Paper Information
Registration To Superconductive Electronics (SCE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication of SrTiO_3/YBa_2Cu_3O_<7-x> Heterostructure by Ion Beam Sputtering and Its Properties
Sub Title (in English)
Keyword(1) IBS
Keyword(2) High T_C Superconductor
Keyword(3) SrTiO_3
Keyword(4) Heterostructure
Keyword(5) Dielectric Property
Keyword(6) Field Effect
1st Author's Name T. Saito
1st Author's Affiliation The Unversity of Electro-Communications()
2nd Author's Name X.Y. Cai
2nd Author's Affiliation The Unversity of Electro-Communications
3rd Author's Name K. Usami
3rd Author's Affiliation The Unversity of Electro-Communications
4th Author's Name T. Kobayashi
4th Author's Affiliation The Unversity of Electro-Communications
5th Author's Name T. Goto
5th Author's Affiliation The Unversity of Electro-Communications
Date 1996/7/24
Paper # SCE96-10
Volume (vol) vol.96
Number (no) 174
Page pp.pp.-
#Pages 5
Date of Issue