Presentation 1997/1/22
A Miniaturized Josephson Memory Cell Fabricated using ECR Plasma Etching and Bias-Sputtering Planarization
Hideaki Numata, Shuichi Nagasawa, Shuichi Tahara,
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Abstract(in English) We developed an 8.5μm×11.5μm vortex transitional (VT) memory cell. The memory cell is the smallest Josephson memory cell ever reported. The cell was fabricated by electron cyclotron resonance plasma etching and bias-sputtering planarization. This is also the first Josephson circuit fabricated with sub-micron minimum feature size. Proper non-destructive read-out operation was verified even after half-selected conditions. An operating margin of ±14% was obtained for control currents I_X and I_Y. These results are promising for developing a high density Josephson RAM.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Josephson Device / Memory / Superconductive Circuit / ECR Plasma Etching / Bias-Sputtering / Planarization
Paper # SCE96-29
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Committee SCE
Conference Date 1997/1/22(1days)
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Registration To Superconductive Electronics (SCE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A Miniaturized Josephson Memory Cell Fabricated using ECR Plasma Etching and Bias-Sputtering Planarization
Sub Title (in English)
Keyword(1) Josephson Device
Keyword(2) Memory
Keyword(3) Superconductive Circuit
Keyword(4) ECR Plasma Etching
Keyword(5) Bias-Sputtering
Keyword(6) Planarization
1st Author's Name Hideaki Numata
1st Author's Affiliation Fundamental Research Laboratories, NEC Corporation()
2nd Author's Name Shuichi Nagasawa
2nd Author's Affiliation Fundamental Research Laboratories, NEC Corporation
3rd Author's Name Shuichi Tahara
3rd Author's Affiliation Fundamental Research Laboratories, NEC Corporation
Date 1997/1/22
Paper # SCE96-29
Volume (vol) vol.96
Number (no) 452
Page pp.pp.-
#Pages 6
Date of Issue