Presentation 1996/10/30
Dielectric-base transistor with doped channel : 1V operation of dielectric-base transistor
Tsunehiro Hato, Akira Yoshida, Chikako Yoshida, Hideo Suzuki, Naoki Yokoyama,
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Abstract(in English) There has been a demand for high-performance dielectric-base transistors with lower operating voltages. To lower the operating voltage, the conduction band of the channel needs to be reduced. LaTiO_3 deposited on SrTiO_3 supplies carriers in the SrTiO_3 substrate by displacing Sr^<2+> and La^<3+>. Then, we carried out partial doping using a CeO 2 window. With the technique, we fabricated a YBCO/In_2O_3/SrTiO_3/LaTiO_3/SrTiO_3 transistor with a partially doped channel. The transistor operates under 1V while maintaining a voltage amplification factor of 2.0, which is one order smaller than the 15V operating voltage of a transistor with an un-doped channel. The base potential relative to the emitter conduction band has been reduced from 2.5 eV to 0.3 eV.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) superconductivity / dielectric / transistor / doping / SrTiO_3 / LaTiO_3
Paper # SCE96-21
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Conference Information
Committee SCE
Conference Date 1996/10/30(1days)
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Paper Information
Registration To Superconductive Electronics (SCE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Dielectric-base transistor with doped channel : 1V operation of dielectric-base transistor
Sub Title (in English)
Keyword(1) superconductivity
Keyword(2) dielectric
Keyword(3) transistor
Keyword(4) doping
Keyword(5) SrTiO_3
Keyword(6) LaTiO_3
1st Author's Name Tsunehiro Hato
1st Author's Affiliation Fujitsu Limited()
2nd Author's Name Akira Yoshida
2nd Author's Affiliation Fujitsu Limited
3rd Author's Name Chikako Yoshida
3rd Author's Affiliation Fujitsu Limited
4th Author's Name Hideo Suzuki
4th Author's Affiliation Fujitsu Limited
5th Author's Name Naoki Yokoyama
5th Author's Affiliation Fujitsu Limited
Date 1996/10/30
Paper # SCE96-21
Volume (vol) vol.96
Number (no) 333
Page pp.pp.-
#Pages 6
Date of Issue