| Presentation | 1996/4/24 Preparation and Properties of Superconducting Base Three-Terminal Device Takehiko Makita, Katsufumi Hashimoto, Hitoshi Abe, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | (Ba,Rb)BiO_3 superconducting base three-terminal device was fabricated with In_2O_3 thin film as a collector barrier. In_2O_3 thin film was prepared by molecular beam epitaxy method with ozone oxidation. Amorphous In_2O_3 thin film grows at room temperature. The electric properties of the thin film showed like n-type semiconducting. The characteristics of In_2O_3/(Ba,Rb)BiO_3 junction indicated rectifying and the breakdown voltage became larger than that of In/(Ba,Rb)BiO_3 with natural barrier. The static charateristics of three-terminal device of these material was improved and the leackage current was decreased. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | In_2O_3 / In/BRBO/STO(Nb) three-terminal device / In_2O_3/(BaRb)BiO_3 junction |
| Paper # | SCE-96-7 |
| Date of Issue |
| Conference Information | |
| Committee | SCE |
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| Conference Date | 1996/4/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Superconductive Electronics (SCE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Preparation and Properties of Superconducting Base Three-Terminal Device |
| Sub Title (in English) | |
| Keyword(1) | In_2O_3 |
| Keyword(2) | In/BRBO/STO(Nb) three-terminal device |
| Keyword(3) | In_2O_3/(BaRb)BiO_3 junction |
| 1st Author's Name | Takehiko Makita |
| 1st Author's Affiliation | Oki Electric Industry Co., Ltd. Research & Development Group() |
| 2nd Author's Name | Katsufumi Hashimoto |
| 2nd Author's Affiliation | Oki Electric Industry Co., Ltd. Research & Development Group |
| 3rd Author's Name | Hitoshi Abe |
| 3rd Author's Affiliation | Oki Electric Industry Co., Ltd. Research & Development Group |
| Date | 1996/4/24 |
| Paper # | SCE-96-7 |
| Volume (vol) | vol.96 |
| Number (no) | 17 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |