Presentation | 1996/2/21 Characteristics of superconductor gate nMOSFET at very low temperature Keiichi Yamamoto, Masaaki Maezawa, Masahiro Aoyagi, Hiroshi Nakagawa, Itaru Kurosawa, Satoru Matsumoto, |
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Abstract(in Japanese) | (See Japanese page) | |
Abstract(in English) | We have studied superconductor NbN gate nMOSFETs fabricated on p-type Si, undoped Si and n-type Si substrates, respectively. The nMOSFETs on undoped Si and n-type Si have operated properly at 4.2K. Field effect mobility of nMOSFETs on undoped Si substrate is higher than nMOSFET on p-type Si. The difference in mobility is attributed to the difference of impurity density in channels. The observed threshold voltages of NbN gate nMOSFETs on p-type Si, undoped Si and n-type Si are almost the same value, about 1.8V at 4.2K. This result suggests that V_ | at very low temperature does not depend strongly on impurity type of the Si substrates. |
Keyword(in Japanese) | (See Japanese page) | |
Keyword(in English) | NbN gate n-MOSFET / mobility / undoped Si / Cryo-MOSFET / threshold voltage | |
Paper # | SCE95-42 | |
Date of Issue |
Conference Information | |
Committee | SCE |
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Conference Date | 1996/2/21(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Superconductive Electronics (SCE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Characteristics of superconductor gate nMOSFET at very low temperature |
Sub Title (in English) | |
Keyword(1) | NbN gate n-MOSFET |
Keyword(2) | mobility |
Keyword(3) | undoped Si |
Keyword(4) | Cryo-MOSFET |
Keyword(5) | threshold voltage |
1st Author's Name | Keiichi Yamamoto |
1st Author's Affiliation | Facuity of Science and Technology, Keio University() |
2nd Author's Name | Masaaki Maezawa |
2nd Author's Affiliation | Electrotechnical Laboratory |
3rd Author's Name | Masahiro Aoyagi |
3rd Author's Affiliation | Electrotechnical Laboratory |
4th Author's Name | Hiroshi Nakagawa |
4th Author's Affiliation | Electrotechnical Laboratory |
5th Author's Name | Itaru Kurosawa |
5th Author's Affiliation | Electrotechnical Laboratory |
6th Author's Name | Satoru Matsumoto |
6th Author's Affiliation | Facuity of Science and Technology, Keio University |
Date | 1996/2/21 |
Paper # | SCE95-42 |
Volume (vol) | vol.95 |
Number (no) | 531 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |