| Presentation | 1995/7/26 Fabrication of High-Quality Deep Submicron Nb/AlOx/Nb Josephson Junctions Using FINP N. Nagai, F. Furuta, H. Akaike, A. Fujimaki, H. Hayakawa, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have successfully fabricated high-quality 0.1μm^2 Nb/AlOx/Nb junctions with critical current Ic of 10μA using Focused ion beam Implanted Nb Patterning (FINP) technique for defining the counter electrodes. These junctions were obtained by insertion of a buffer layer in the counter electrode. The junctions without the buffer layer often showed leaky characteristics, which indicated that the implanted ions damaged the tunnel barrier. On the other hand, when the buffer layer was used, the high-quality junctions were obtained with good reproducibility. This result means that the buffer layer is effective to prevent implanted ions from damaging the tunnel barrier |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | FIB / FINP / high-quality / buffer layer / tunnel barrier |
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| Conference Information | |
| Committee | SCE |
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| Conference Date | 1995/7/26(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Registration To | Superconductive Electronics (SCE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of High-Quality Deep Submicron Nb/AlOx/Nb Josephson Junctions Using FINP |
| Sub Title (in English) | |
| Keyword(1) | FIB |
| Keyword(2) | FINP |
| Keyword(3) | high-quality |
| Keyword(4) | buffer layer |
| Keyword(5) | tunnel barrier |
| 1st Author's Name | N. Nagai |
| 1st Author's Affiliation | Nagoya University, Department of Electronics Engineering() |
| 2nd Author's Name | F. Furuta |
| 2nd Author's Affiliation | Nagoya University, Department of Electronics Engineering |
| 3rd Author's Name | H. Akaike |
| 3rd Author's Affiliation | Nagoya University, Department of Electronics Engineering |
| 4th Author's Name | A. Fujimaki |
| 4th Author's Affiliation | Nagoya University, Department of Electronics Engineering |
| 5th Author's Name | H. Hayakawa |
| 5th Author's Affiliation | Nagoya University, Department of Electronics Engineering |
| Date | 1995/7/26 |
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| Volume (vol) | vol.95 |
| Number (no) | 186 |
| Page | pp.pp.- |
| #Pages | 6 |
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