Presentation 1995/10/25
Device characteristics of JOFETs using InAs-inserted-channel InAlAs/InGaAs inverted HEMTs
Tatsushi Akazaki, Hideaki Takayanagi, Junsaku Nitta, Takatomo Enoki,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) A newly fabricated Josephson field effect transistor (JOFET) is coupled with an InAs-inserted-channel InAlAs/InGaAs inverted HEMT which has high electron transport properties and superior controllability by the field effect. We indicate that the superconducting critical current I_c as well as the junction's normal resistance R_N can be completely controlled via a gate voltage of -1V. Moreover, this JOFET has also superior controllability of the normal current at low temperature to a conventional InAs-inserted-channel InAlAs/InGaAs inverted HEMT. These results show that this JOFET can be used as both superconductor and semiconductor device.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) InAs / inverted HEMT / JOFET / three-terminal operation / transconductance / voltage gain
Paper # SCE95-21
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Conference Information
Committee SCE
Conference Date 1995/10/25(1days)
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Paper Information
Registration To Superconductive Electronics (SCE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Device characteristics of JOFETs using InAs-inserted-channel InAlAs/InGaAs inverted HEMTs
Sub Title (in English)
Keyword(1) InAs
Keyword(2) inverted HEMT
Keyword(3) JOFET
Keyword(4) three-terminal operation
Keyword(5) transconductance
Keyword(6) voltage gain
1st Author's Name Tatsushi Akazaki
1st Author's Affiliation NTT Basic Research Laboratories()
2nd Author's Name Hideaki Takayanagi
2nd Author's Affiliation NTT Basic Research Laboratories
3rd Author's Name Junsaku Nitta
3rd Author's Affiliation NTT Basic Research Laboratories
4th Author's Name Takatomo Enoki
4th Author's Affiliation LSI laboratories
Date 1995/10/25
Paper # SCE95-21
Volume (vol) vol.95
Number (no) 338
Page pp.pp.-
#Pages 6
Date of Issue