Presentation 1998/1/28
Dielectric-base transistor with ferroelectric gate insulator
A Yoshida, T. Hato, Y. Ishimaru, H. Aso, H. Suzuki, C. Yoshida, N. Yokoyama,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We proposed using DBT with ferroelectric gate insulator as a memory cell. We fabricated BaTiO_3 ferroelectric film and evaluated it as a gate insulator, The remanent polarization of the film under YBCO film was about 0.1μC/cm^2. The transistor structure was fabricated using this BaTiO_3 ferroelectric gate insulator and YBCO electrodes. Some transistor shows the voltage gain above unity, and memory effect caused by the self-polarization of the gate ferroelectrics, that was observed as shift of threshold voltage in the I-V characteristics was present.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Dielectric base transistor / Ferroelectric film / Memory application / YBCO
Paper # SCE97-35
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Conference Information
Committee SCE
Conference Date 1998/1/28(1days)
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Paper Information
Registration To Superconductive Electronics (SCE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Dielectric-base transistor with ferroelectric gate insulator
Sub Title (in English)
Keyword(1) Dielectric base transistor
Keyword(2) Ferroelectric film
Keyword(3) Memory application
Keyword(4) YBCO
1st Author's Name A Yoshida
1st Author's Affiliation Fujitsu Ltd.()
2nd Author's Name T. Hato
2nd Author's Affiliation Fujitsu Ltd.
3rd Author's Name Y. Ishimaru
3rd Author's Affiliation Fujitsu Ltd.
4th Author's Name H. Aso
4th Author's Affiliation Fujitsu Laboratories Ltd.
5th Author's Name H. Suzuki
5th Author's Affiliation Fujitsu Ltd.
6th Author's Name C. Yoshida
6th Author's Affiliation Fujitsu Laboratories Ltd.
7th Author's Name N. Yokoyama
7th Author's Affiliation Fujitsu Ltd.
Date 1998/1/28
Paper # SCE97-35
Volume (vol) vol.97
Number (no) 516
Page pp.pp.-
#Pages 6
Date of Issue