| Presentation | 1998/1/28 Dielectric-base transistor with ferroelectric gate insulator A Yoshida, T. Hato, Y. Ishimaru, H. Aso, H. Suzuki, C. Yoshida, N. Yokoyama, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We proposed using DBT with ferroelectric gate insulator as a memory cell. We fabricated BaTiO_3 ferroelectric film and evaluated it as a gate insulator, The remanent polarization of the film under YBCO film was about 0.1μC/cm^2. The transistor structure was fabricated using this BaTiO_3 ferroelectric gate insulator and YBCO electrodes. Some transistor shows the voltage gain above unity, and memory effect caused by the self-polarization of the gate ferroelectrics, that was observed as shift of threshold voltage in the I-V characteristics was present. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Dielectric base transistor / Ferroelectric film / Memory application / YBCO |
| Paper # | SCE97-35 |
| Date of Issue |
| Conference Information | |
| Committee | SCE |
|---|---|
| Conference Date | 1998/1/28(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Superconductive Electronics (SCE) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Dielectric-base transistor with ferroelectric gate insulator |
| Sub Title (in English) | |
| Keyword(1) | Dielectric base transistor |
| Keyword(2) | Ferroelectric film |
| Keyword(3) | Memory application |
| Keyword(4) | YBCO |
| 1st Author's Name | A Yoshida |
| 1st Author's Affiliation | Fujitsu Ltd.() |
| 2nd Author's Name | T. Hato |
| 2nd Author's Affiliation | Fujitsu Ltd. |
| 3rd Author's Name | Y. Ishimaru |
| 3rd Author's Affiliation | Fujitsu Ltd. |
| 4th Author's Name | H. Aso |
| 4th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 5th Author's Name | H. Suzuki |
| 5th Author's Affiliation | Fujitsu Ltd. |
| 6th Author's Name | C. Yoshida |
| 6th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 7th Author's Name | N. Yokoyama |
| 7th Author's Affiliation | Fujitsu Ltd. |
| Date | 1998/1/28 |
| Paper # | SCE97-35 |
| Volume (vol) | vol.97 |
| Number (no) | 516 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |