Presentation | 1998/1/28 Dielectric-base transistor with ferroelectric gate insulator A Yoshida, T. Hato, Y. Ishimaru, H. Aso, H. Suzuki, C. Yoshida, N. Yokoyama, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We proposed using DBT with ferroelectric gate insulator as a memory cell. We fabricated BaTiO_3 ferroelectric film and evaluated it as a gate insulator, The remanent polarization of the film under YBCO film was about 0.1μC/cm^2. The transistor structure was fabricated using this BaTiO_3 ferroelectric gate insulator and YBCO electrodes. Some transistor shows the voltage gain above unity, and memory effect caused by the self-polarization of the gate ferroelectrics, that was observed as shift of threshold voltage in the I-V characteristics was present. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Dielectric base transistor / Ferroelectric film / Memory application / YBCO |
Paper # | SCE97-35 |
Date of Issue |
Conference Information | |
Committee | SCE |
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Conference Date | 1998/1/28(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
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Paper Information | |
Registration To | Superconductive Electronics (SCE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Dielectric-base transistor with ferroelectric gate insulator |
Sub Title (in English) | |
Keyword(1) | Dielectric base transistor |
Keyword(2) | Ferroelectric film |
Keyword(3) | Memory application |
Keyword(4) | YBCO |
1st Author's Name | A Yoshida |
1st Author's Affiliation | Fujitsu Ltd.() |
2nd Author's Name | T. Hato |
2nd Author's Affiliation | Fujitsu Ltd. |
3rd Author's Name | Y. Ishimaru |
3rd Author's Affiliation | Fujitsu Ltd. |
4th Author's Name | H. Aso |
4th Author's Affiliation | Fujitsu Laboratories Ltd. |
5th Author's Name | H. Suzuki |
5th Author's Affiliation | Fujitsu Ltd. |
6th Author's Name | C. Yoshida |
6th Author's Affiliation | Fujitsu Laboratories Ltd. |
7th Author's Name | N. Yokoyama |
7th Author's Affiliation | Fujitsu Ltd. |
Date | 1998/1/28 |
Paper # | SCE97-35 |
Volume (vol) | vol.97 |
Number (no) | 516 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |