Presentation 1997/11/20
Characteristics of the Junctions Having Double AlOx Bariers
Hideyuki Sugiyama, Keiichi Kobata, Akira Fujimaki, Hisao Hayakawa,
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Abstract(in English) We fabricated Nb/Al/AlOx/Al/AlOx/Nb junctions having double barriers and investigated those characteristics. The superconductivity in Nb penetrates the Al placed between two AlOx barriers through the barriers due to the proximity effect. Josephson current, accordingly, flows across the junctions. The thicker barrier of the two AlOx barriers is the only one that generates voltage. We deduce that the other barrier performs the part to suppress the proximity effect. The current-voltage curves of the junctions look like the characteristics that an SIS junction and an SIN junction are combined. There exists subgap current in the SIN characteristics and it act as a shunt resistance. Thus, Overdamped characteristics are realized without an external shunt resistance. Furthermore, the spread of the critical current for the 64 junctions connected in series is 1.2%. These show that the junctions gave uniform enough characteristics for use in SFQ integrated circuits. In this monograph, we show that critical current density J_c and I_cR product of the junctions having double AlOx barriers depend on the thicknesses of AlOx barriers.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) double barriers / Nb/Al/AlOx/Al/AlOx/Nb junctions / the proximity effect / overdamped / SFQ circuits
Paper # SCE97-33
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Conference Information
Committee SCE
Conference Date 1997/11/20(1days)
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Registration To Superconductive Electronics (SCE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Characteristics of the Junctions Having Double AlOx Bariers
Sub Title (in English)
Keyword(1) double barriers
Keyword(2) Nb/Al/AlOx/Al/AlOx/Nb junctions
Keyword(3) the proximity effect
Keyword(4) overdamped
Keyword(5) SFQ circuits
1st Author's Name Hideyuki Sugiyama
1st Author's Affiliation Department of Quantum Engineering, Nogoya University()
2nd Author's Name Keiichi Kobata
2nd Author's Affiliation Department of Electronics, Nogoya University
3rd Author's Name Akira Fujimaki
3rd Author's Affiliation Department of Quantum Engineering, Nogoya University
4th Author's Name Hisao Hayakawa
4th Author's Affiliation Department of Quantum Engineering, Nogoya University
Date 1997/11/20
Paper # SCE97-33
Volume (vol) vol.97
Number (no) 383
Page pp.pp.-
#Pages 6
Date of Issue