Presentation | 1997/11/20 Analytical Expressions for the Flux-Dependent I-V Characteristics of DC Superconducting Quantum Interference Device E. Maruyama, S. Kuriki, M. Matsuda, Y. Kurisu, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | In order to have insight to the flux dependence of the I-V characteristics of dc SQUIDs, which have variety of configurations that may be expressed with the equivalent circuit composed of single inductance to complex impedance, we have studied analytical expressions for the voltage of the Josephson junctions of the SQUID. Assuming sinusoidal oscillating currents of the junctions for the simplification and easy-computation and using four-terminal transmission function of the SQUID impedance, the junction voltage was calculated analytically for different flux values, from which the I-V characteristics at 0 K and at finite temperatures with thermal noise were obtained. The results were in reasonable agreement with those calculated with a numerical method solving non-linear differential equations. The present method may be helpful in estimating the behavior of high-Tc SQUIDs which have strong resonance due to large parasitic capacitance and operate under high flux fluctuation. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | dc SQUID / high-Tc / characteristics of resonance / simulations |
Paper # | SCE97-32 |
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Conference Information | |
Committee | SCE |
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Conference Date | 1997/11/20(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Superconductive Electronics (SCE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Analytical Expressions for the Flux-Dependent I-V Characteristics of DC Superconducting Quantum Interference Device |
Sub Title (in English) | |
Keyword(1) | dc SQUID |
Keyword(2) | high-Tc |
Keyword(3) | characteristics of resonance |
Keyword(4) | simulations |
1st Author's Name | E. Maruyama |
1st Author's Affiliation | Research Institute for Electronic Science, Hokkaido University() |
2nd Author's Name | S. Kuriki |
2nd Author's Affiliation | Research Institute for Electronic Science, Hokkaido University |
3rd Author's Name | M. Matsuda |
3rd Author's Affiliation | Muroran Institute of Technology |
4th Author's Name | Y. Kurisu |
4th Author's Affiliation | Muroran Institute of Technology |
Date | 1997/11/20 |
Paper # | SCE97-32 |
Volume (vol) | vol.97 |
Number (no) | 383 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |