Presentation 1997/11/20
Performance of High Tc dc SQUID Utilizing a Bicrystal Junction with a 30°Misorientation Angle
T. Minotani, S. Kawakami, K Enpuku,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) A high Tc dc SQUID was fabricated using a bicrystal junction with a misorientation angle of θ=30°. The 30°bicrystal junction exhibited high resistance (R_s=10Ω) and high I_oR_S product (I_oR_s=250μV) at T=77K when junction width is 2μm. These values were obtained reproductively in 17 samples we have made so far. The voltage modulation depth of the SQUID was as high as ΔV=85μV, 50μV, and 20μV for the inductance value L_s =60pH, 100pH and 160pH respectively. Preliminary noise measurement showed that the flux noise of the SQUID was about 6μΦ_o/Hz^<1/2> for the while noise region, and 110μ_o/Hz^<1/2> at f=1Hz when the 60pH-SQUID was dc biased and operated with a conventional FLL circuit. From the 1/f noise of the SQUID at f=1Hz, we found that the normalized fluctuation of the critical current is δI_o/I_o=1.7×10^<-4>. This value is the same as those reported for 24°and 36.8°bicrystal junction. These results indicate that the 30°bicrytal junction is useful for the development of high performance SQUID.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) High Tc SQUID / bicrystal junction / V-Φ curve / flux noise
Paper # SCE97-31
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Committee SCE
Conference Date 1997/11/20(1days)
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Registration To Superconductive Electronics (SCE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Performance of High Tc dc SQUID Utilizing a Bicrystal Junction with a 30°Misorientation Angle
Sub Title (in English)
Keyword(1) High Tc SQUID
Keyword(2) bicrystal junction
Keyword(3) V-Φ curve
Keyword(4) flux noise
1st Author's Name T. Minotani
1st Author's Affiliation Department of Electronic Device Engineering, Kyushu University()
2nd Author's Name S. Kawakami
2nd Author's Affiliation Department of Electronic Device Engineering, Kyushu University
3rd Author's Name K Enpuku
3rd Author's Affiliation Department of Electronic Device Engineering, Kyushu University
Date 1997/11/20
Paper # SCE97-31
Volume (vol) vol.97
Number (no) 383
Page pp.pp.-
#Pages 5
Date of Issue