Presentation | 1997/11/20 Performance of High Tc dc SQUID Utilizing a Bicrystal Junction with a 30°Misorientation Angle T. Minotani, S. Kawakami, K Enpuku, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A high Tc dc SQUID was fabricated using a bicrystal junction with a misorientation angle of θ=30°. The 30°bicrystal junction exhibited high resistance (R_s=10Ω) and high I_oR_S product (I_oR_s=250μV) at T=77K when junction width is 2μm. These values were obtained reproductively in 17 samples we have made so far. The voltage modulation depth of the SQUID was as high as ΔV=85μV, 50μV, and 20μV for the inductance value L_s =60pH, 100pH and 160pH respectively. Preliminary noise measurement showed that the flux noise of the SQUID was about 6μΦ_o/Hz^<1/2> for the while noise region, and 110μ_o/Hz^<1/2> at f=1Hz when the 60pH-SQUID was dc biased and operated with a conventional FLL circuit. From the 1/f noise of the SQUID at f=1Hz, we found that the normalized fluctuation of the critical current is δI_o/I_o=1.7×10^<-4>. This value is the same as those reported for 24°and 36.8°bicrystal junction. These results indicate that the 30°bicrytal junction is useful for the development of high performance SQUID. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | High Tc SQUID / bicrystal junction / V-Φ curve / flux noise |
Paper # | SCE97-31 |
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Conference Information | |
Committee | SCE |
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Conference Date | 1997/11/20(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Superconductive Electronics (SCE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Performance of High Tc dc SQUID Utilizing a Bicrystal Junction with a 30°Misorientation Angle |
Sub Title (in English) | |
Keyword(1) | High Tc SQUID |
Keyword(2) | bicrystal junction |
Keyword(3) | V-Φ curve |
Keyword(4) | flux noise |
1st Author's Name | T. Minotani |
1st Author's Affiliation | Department of Electronic Device Engineering, Kyushu University() |
2nd Author's Name | S. Kawakami |
2nd Author's Affiliation | Department of Electronic Device Engineering, Kyushu University |
3rd Author's Name | K Enpuku |
3rd Author's Affiliation | Department of Electronic Device Engineering, Kyushu University |
Date | 1997/11/20 |
Paper # | SCE97-31 |
Volume (vol) | vol.97 |
Number (no) | 383 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |