| Presentation | 1997/7/30 Fabrication and characterization of epitaxial Nb films M. Matsuda, M. Matsumoto, N. Taneda, F. Hirayama, S. Kuriki, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Single-crystal-like Nb films with low normal state resistivities were grown epitaxially on (11^^-02) sapphire substrates at above 500℃ by either a dc magnetron sputtering or an electron-beam evaporation method. Prepared Nb films have very flat surface, shorter magnetic penetration depths (λ) and longer superconducting coherence lengths (ξ_ |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Nb film / epitaxial growth / residual resistance ratio / penetration depth / magnetization properties |
| Paper # | sce97-17 |
| Date of Issue |
| Conference Information | |
| Committee | SCE |
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| Conference Date | 1997/7/30(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Superconductive Electronics (SCE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication and characterization of epitaxial Nb films |
| Sub Title (in English) | |
| Keyword(1) | Nb film |
| Keyword(2) | epitaxial growth |
| Keyword(3) | residual resistance ratio |
| Keyword(4) | penetration depth |
| Keyword(5) | magnetization properties |
| 1st Author's Name | M. Matsuda |
| 1st Author's Affiliation | Muroran Institute of Technology() |
| 2nd Author's Name | M. Matsumoto |
| 2nd Author's Affiliation | Muroran Institute of Technology |
| 3rd Author's Name | N. Taneda |
| 3rd Author's Affiliation | Muroran Institute of Technology |
| 4th Author's Name | F. Hirayama |
| 4th Author's Affiliation | Electrotechnical Laboratory |
| 5th Author's Name | S. Kuriki |
| 5th Author's Affiliation | Research Institute for Electronic Science, Hokkaido University |
| Date | 1997/7/30 |
| Paper # | sce97-17 |
| Volume (vol) | vol.97 |
| Number (no) | 219 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |