| Presentation | 1998/9/18 Exchange bias field in Ni-Fe/FeMn bilayers for spin valve Koichi NISHIMURA, Yutaka SHIMIZU, Shigeki NAKAGAWA, MASAHIKO Naoe, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Ni-Fe/FeMn bilayers for spin valve were deposited using dual ion beam sputtering(DIBS)apparatus.For the application of tunneling magnetoresistive(TMR)spin valve, Ni-Fe/FeMn bilayers were deposited on Si_3N_4 dielectric layer and Si semiconductor layer.Although Ni-Fe/FeMn bilayers deposited on Si_3N_4 buffer layer did not exhibit the detectable exchange bias field H_ex. Ion bombardment at Ni-Fe/FeMn interface with moderate acceleration, (111)orientation in FeMn crystallites were improved and Ni-Fe/FeMn bilayers exhibited H_ex. of about 35 Oe.Ni-Fe/FeMn bilayers depositedd on Si buffer layer exhibited high H_ex.of about 134 Oe. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | dual ion beam sputtering / spin valve / tunneling magnetoresisteve / exchange bias field |
| Paper # | MR98-16 |
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| Conference Information | |
| Committee | MR |
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| Conference Date | 1998/9/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Magnetic Recording (MR) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Exchange bias field in Ni-Fe/FeMn bilayers for spin valve |
| Sub Title (in English) | |
| Keyword(1) | dual ion beam sputtering |
| Keyword(2) | spin valve |
| Keyword(3) | tunneling magnetoresisteve |
| Keyword(4) | exchange bias field |
| 1st Author's Name | Koichi NISHIMURA |
| 1st Author's Affiliation | Department of Physical Electronics, Faculty of Engineering, Tokyo Institute of Technology() |
| 2nd Author's Name | Yutaka SHIMIZU |
| 2nd Author's Affiliation | Department of Physical Electronics, Faculty of Engineering, Tokyo Institute of Technology |
| 3rd Author's Name | Shigeki NAKAGAWA |
| 3rd Author's Affiliation | Department of Physical Electronics, Faculty of Engineering, Tokyo Institute of Technology |
| 4th Author's Name | MASAHIKO Naoe |
| 4th Author's Affiliation | Department of Physical Electronics, Faculty of Engineering, Tokyo Institute of Technology |
| Date | 1998/9/18 |
| Paper # | MR98-16 |
| Volume (vol) | vol.98 |
| Number (no) | 281 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |