Presentation 1996/3/1
Reduction of crystallite size in BaM thin film media
Y. Kubota, Y. Hoshi,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Reduction of crystallite size in BaM thin film magnetic recording media was investigated. The crystallite size of BaM thin film deposited on thermally oxidized silicon wafer substrate decreased monotonically as the film thickness decreased and took a value less than 30nm in the film with a thickness below 20nm. However, coercivity of the film decreased significantly as the film thickness decreased below 30nm. This reduction was seemed to be caused by an increase in the amount of particles with super para magnetism. Control of crystallite size of the BaM thin film was attempted by controlling the crystallite size of ZnO underlayer. The ZnO underlayer promoted the growth of hexagonal BaM crystallites on it ,but the reduction of the crystallite size in the underlayer was not effective to reduce the crystallite size of the BaM thin film.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) barium ferrite / thin film media / crystallite size sputter deposition / ZnO underlayer
Paper # MR95-91,CPM95-129
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Committee MR
Conference Date 1996/3/1(1days)
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Registration To Magnetic Recording (MR)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Reduction of crystallite size in BaM thin film media
Sub Title (in English)
Keyword(1) barium ferrite
Keyword(2) thin film media
Keyword(3) crystallite size sputter deposition
Keyword(4) ZnO underlayer
1st Author's Name Y. Kubota
1st Author's Affiliation Faculty of Engineering, Tokyo Institute of Polytechnics()
2nd Author's Name Y. Hoshi
2nd Author's Affiliation Faculty of Engineering, Tokyo Institute of Polytechnics
Date 1996/3/1
Paper # MR95-91,CPM95-129
Volume (vol) vol.95
Number (no) 549
Page pp.pp.-
#Pages 8
Date of Issue