| Presentation | 1996/2/29 630-nm-band Red Laser Diodes for High Density Optical Disc Systems K. Yodoshi, A. Ibaraki, M. Shono, Y. Bessho, R. Hiroyama, T. Niina, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | AlGaInP laser diodes with a shorter wavelength, a low threshold current, a high maximum operating temperature and low noise are strongly desired as light sources for high-density optical disc systems. A 630-nm band AlGaInP red laser diode, which fulfills these demands, was realized, for the first time, by introducing strain-compensated MQW active layer with compressively strained quantum barriers and tensile strained quantum wells. The following characteristics have been obtained : a threshold current of 33mA in the single mode laser diode, and a threshold current of 48mA and relative intensity noise (RIN) below 7×10^<-14>Hz^<-1> in the sellf-pulsating laser diode. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | semiconductor laser / single-mode / self-sustained pulsation / multiple quantum well / AlGaInP |
| Paper # | MR95-86,CPM95-124 |
| Date of Issue |
| Conference Information | |
| Committee | MR |
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| Conference Date | 1996/2/29(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Magnetic Recording (MR) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | 630-nm-band Red Laser Diodes for High Density Optical Disc Systems |
| Sub Title (in English) | |
| Keyword(1) | semiconductor laser |
| Keyword(2) | single-mode |
| Keyword(3) | self-sustained pulsation |
| Keyword(4) | multiple quantum well |
| Keyword(5) | AlGaInP |
| 1st Author's Name | K. Yodoshi |
| 1st Author's Affiliation | Microelectronics Research Center, SANYO Electric Co., Ltd.() |
| 2nd Author's Name | A. Ibaraki |
| 2nd Author's Affiliation | Microelectronics Research Center, SANYO Electric Co., Ltd. |
| 3rd Author's Name | M. Shono |
| 3rd Author's Affiliation | Microelectronics Research Center, SANYO Electric Co., Ltd. |
| 4th Author's Name | Y. Bessho |
| 4th Author's Affiliation | Microelectronics Research Center, SANYO Electric Co., Ltd. |
| 5th Author's Name | R. Hiroyama |
| 5th Author's Affiliation | Microelectronics Research Center, SANYO Electric Co., Ltd. |
| 6th Author's Name | T. Niina |
| 6th Author's Affiliation | Microelectronics Research Center, SANYO Electric Co., Ltd. |
| Date | 1996/2/29 |
| Paper # | MR95-86,CPM95-124 |
| Volume (vol) | vol.95 |
| Number (no) | 548 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |