Presentation | 1995/11/23 Improvement of Soft Magnetism of a-Co-Zr-Ta Spurtered Films for Backlayers in Perpendicular Magnetic Recording Media. Satoshi TANAKA, Nobuhiro MATSUSHITA, Shigeki NAKAGAWA, Masahiko NAOE, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Amorphous Co-Zr(-Ta) films which have larger saturation magnetization than Ni-Fe ones were deposited by using the facing targets sputtering (FTS) apparatus for the applications as backlayer in perpendicular magnetic recording media. Co-Zr films revealed good soft magnetism when films were prepared at low Kr gas pressure and at low substrate temperature. Ta was added to Co-Zr to enhance fine granulation and to decrease the magnetostriction constant. The minimum H_c of 0.75 Oe and the maximum μ_r of 580 were obtained for the films with composition of Co_<85.2>Zn_<3.6>Ta_<11.2>. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | backlayer / amorphous thin film / facing targets sputtering / composition ratio of Ta / low magnetostriction |
Paper # | MR95-45 |
Date of Issue |
Conference Information | |
Committee | MR |
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Conference Date | 1995/11/23(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Magnetic Recording (MR) |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Improvement of Soft Magnetism of a-Co-Zr-Ta Spurtered Films for Backlayers in Perpendicular Magnetic Recording Media. |
Sub Title (in English) | |
Keyword(1) | backlayer |
Keyword(2) | amorphous thin film |
Keyword(3) | facing targets sputtering |
Keyword(4) | composition ratio of Ta |
Keyword(5) | low magnetostriction |
1st Author's Name | Satoshi TANAKA |
1st Author's Affiliation | Dept. of Physical Electronics, Tokyo Institute of Technology() |
2nd Author's Name | Nobuhiro MATSUSHITA |
2nd Author's Affiliation | Dept. of Physical Electronics, Tokyo Institute of Technology |
3rd Author's Name | Shigeki NAKAGAWA |
3rd Author's Affiliation | Dept. of Physical Electronics, Tokyo Institute of Technology |
4th Author's Name | Masahiko NAOE |
4th Author's Affiliation | Dept. of Physical Electronics, Tokyo Institute of Technology |
Date | 1995/11/23 |
Paper # | MR95-45 |
Volume (vol) | vol.95 |
Number (no) | 383 |
Page | pp.pp.- |
#Pages | 8 |
Date of Issue |