Presentation | 1997/9/2 Improvement of GMR properties for [Ni_<81>Fe_<19>/Cu]_<30> multilayers deposited by Kr ion beam sputtering Kentaro WATANABE, Koichi NISHIMURA, Yasuyoshi MIYAMOTO, Shigeki NAKAGAWA, Masahiko NAOE, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | [Ni_<81>Fe_<19>/Cu]_<30> multilayers with giant magnetoresistive effect were deposited using the dual ion beam sputtering apparatus. The influence of recoiled Ar to the film structures by ion beam sputtering method seems to be larger than that by the other deposition methods, because of the lower working gas pressure. Therefore, Kr was used as sputtering gas to suppress the energy of recoiled particles. MR ratio of Kr sputtered films was elevated up to 14.5%, because of suppression of incorporation of recoiled particles. In addition, Kr ions were bombarded only to 2 monolayers at the interfaces to control the interfacial structures. Sharp interfaces were constructed and the MR ratio was much elevated to 17.8% by ion bombardment to the interfaces at the acceleration voltage of 100V. However, MR ratio drastically decreased with the growth of (111) orientation of Ni-Fe and Cu Crystallites. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Giant magnetoresistance / Dual ion beam sputtering / Recoiled particles / Ion bombardment / Interfacial structure |
Paper # | MR97-27 |
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Conference Information | |
Committee | MR |
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Conference Date | 1997/9/2(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Magnetic Recording (MR) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Improvement of GMR properties for [Ni_<81>Fe_<19>/Cu]_<30> multilayers deposited by Kr ion beam sputtering |
Sub Title (in English) | |
Keyword(1) | Giant magnetoresistance |
Keyword(2) | Dual ion beam sputtering |
Keyword(3) | Recoiled particles |
Keyword(4) | Ion bombardment |
Keyword(5) | Interfacial structure |
1st Author's Name | Kentaro WATANABE |
1st Author's Affiliation | Department of Physical Electronics, Faculty of Engineering, Tokyo Institute of Technology() |
2nd Author's Name | Koichi NISHIMURA |
2nd Author's Affiliation | Department of Physical Electronics, Faculty of Engineering, Tokyo Institute of Technology |
3rd Author's Name | Yasuyoshi MIYAMOTO |
3rd Author's Affiliation | Department of Physical Electronics, Faculty of Engineering, Tokyo Institute of Technology |
4th Author's Name | Shigeki NAKAGAWA |
4th Author's Affiliation | Department of Physical Electronics, Faculty of Engineering, Tokyo Institute of Technology |
5th Author's Name | Masahiko NAOE |
5th Author's Affiliation | Department of Physical Electronics, Faculty of Engineering, Tokyo Institute of Technology |
Date | 1997/9/2 |
Paper # | MR97-27 |
Volume (vol) | vol.97 |
Number (no) | 245 |
Page | pp.pp.- |
#Pages | 7 |
Date of Issue |