Presentation 1997/9/2
Improvement of GMR properties for [Ni_<81>Fe_<19>/Cu]_<30> multilayers deposited by Kr ion beam sputtering
Kentaro WATANABE, Koichi NISHIMURA, Yasuyoshi MIYAMOTO, Shigeki NAKAGAWA, Masahiko NAOE,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) [Ni_<81>Fe_<19>/Cu]_<30> multilayers with giant magnetoresistive effect were deposited using the dual ion beam sputtering apparatus. The influence of recoiled Ar to the film structures by ion beam sputtering method seems to be larger than that by the other deposition methods, because of the lower working gas pressure. Therefore, Kr was used as sputtering gas to suppress the energy of recoiled particles. MR ratio of Kr sputtered films was elevated up to 14.5%, because of suppression of incorporation of recoiled particles. In addition, Kr ions were bombarded only to 2 monolayers at the interfaces to control the interfacial structures. Sharp interfaces were constructed and the MR ratio was much elevated to 17.8% by ion bombardment to the interfaces at the acceleration voltage of 100V. However, MR ratio drastically decreased with the growth of (111) orientation of Ni-Fe and Cu Crystallites.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Giant magnetoresistance / Dual ion beam sputtering / Recoiled particles / Ion bombardment / Interfacial structure
Paper # MR97-27
Date of Issue

Conference Information
Committee MR
Conference Date 1997/9/2(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Magnetic Recording (MR)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Improvement of GMR properties for [Ni_<81>Fe_<19>/Cu]_<30> multilayers deposited by Kr ion beam sputtering
Sub Title (in English)
Keyword(1) Giant magnetoresistance
Keyword(2) Dual ion beam sputtering
Keyword(3) Recoiled particles
Keyword(4) Ion bombardment
Keyword(5) Interfacial structure
1st Author's Name Kentaro WATANABE
1st Author's Affiliation Department of Physical Electronics, Faculty of Engineering, Tokyo Institute of Technology()
2nd Author's Name Koichi NISHIMURA
2nd Author's Affiliation Department of Physical Electronics, Faculty of Engineering, Tokyo Institute of Technology
3rd Author's Name Yasuyoshi MIYAMOTO
3rd Author's Affiliation Department of Physical Electronics, Faculty of Engineering, Tokyo Institute of Technology
4th Author's Name Shigeki NAKAGAWA
4th Author's Affiliation Department of Physical Electronics, Faculty of Engineering, Tokyo Institute of Technology
5th Author's Name Masahiko NAOE
5th Author's Affiliation Department of Physical Electronics, Faculty of Engineering, Tokyo Institute of Technology
Date 1997/9/2
Paper # MR97-27
Volume (vol) vol.97
Number (no) 245
Page pp.pp.-
#Pages 7
Date of Issue