Presentation 2002/1/17
Formation of ZnO pn Junction by Excimer Laser Doping
Yoshimi SHIMIZU, Hidenori NONAKA, Toru AOKI, Yoshinori HATANAKA,
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Abstract(in English) The a-axis oriented ZnO single crystal films on c-plane sapphire substrate were grown by plasma enhanced metaloganic chemical vapor deposition (MOCVD) using diethylzinc(DEZn) as a source of Zn and oxygen gas. The obtained FWHM of XRD peak for grown ZnO(110) was about 1000s. The Sb doping for p-type ZnO was performed for MOCVD and thermal oxidation grown ZnO film by excimer laser doping. The pn junction was fabricated between the Sb-doped ZnO layer and undoped (naturally n-type) ZnO film. The p-type ZnO layer was obtained by Sb-doping and diode like characteristic was obtained in the pn junction in the case of using ZnO grown by thermal oxidation method.
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Keyword(in English) ZnO / Excimer laser / MOCVD / Sb doping
Paper # EID2001-99
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Committee EID
Conference Date 2002/1/17(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Formation of ZnO pn Junction by Excimer Laser Doping
Sub Title (in English)
Keyword(1) ZnO
Keyword(2) Excimer laser
Keyword(3) MOCVD
Keyword(4) Sb doping
1st Author's Name Yoshimi SHIMIZU
1st Author's Affiliation Research Institute of Electronics, Shizuoka Unviersity()
2nd Author's Name Hidenori NONAKA
2nd Author's Affiliation Research Institute of Electronics, Shizuoka Unviersity
3rd Author's Name Toru AOKI
3rd Author's Affiliation Research Institute of Electronics, Shizuoka Unviersity
4th Author's Name Yoshinori HATANAKA
4th Author's Affiliation Research Institute of Electronics, Shizuoka Unviersity
Date 2002/1/17
Paper # EID2001-99
Volume (vol) vol.101
Number (no) 599
Page pp.pp.-
#Pages 6
Date of Issue