Presentation 2001/11/1
Fabrication of a-Si:H avalanche multiplication photodiode films on polycrystalline silicon
Masahiro Akiyama, Masaki Hanada, Hidekuni Takao, Kazuaki Sawada, Makoto Ishida,
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Abstract(in English) An image sensor with high sensitivity and high pixel density is necessary. In order to reconcile these requirements, on avalanche multiplication phtodiode on Si substrate was confirmed. However, other n-type materials are necessary to be united with the a-Si:H photoconductivity film and reading circuit. In the photoconductivity film deposited on the poly-Si n-type material. The surface of the wafer was made smooth by CMP(Chemical Mechanical Polishing). As a result, impurities were diffused and removed from the surface layer by wet oxygen, thereby decreasing the dark current. Sensitivity of light was then increased and a basic characteristic of the pin photoconductivity film was confirmed.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Avalanche pin Photodiode / Stacked-type Image Sensors / Hydrogenated Amorphous Silicon / CMP(Chemical Mechanical Polishing) / Wet Oxygen
Paper # EID2001-43
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Committee EID
Conference Date 2001/11/1(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication of a-Si:H avalanche multiplication photodiode films on polycrystalline silicon
Sub Title (in English)
Keyword(1) Avalanche pin Photodiode
Keyword(2) Stacked-type Image Sensors
Keyword(3) Hydrogenated Amorphous Silicon
Keyword(4) CMP(Chemical Mechanical Polishing)
Keyword(5) Wet Oxygen
1st Author's Name Masahiro Akiyama
1st Author's Affiliation Department of Electrical and Electronic Engineering, Toyohashi University of Technology()
2nd Author's Name Masaki Hanada
2nd Author's Affiliation Department of Electrical and Electronic Engineering, Toyohashi University of Technology
3rd Author's Name Hidekuni Takao
3rd Author's Affiliation Department of Electrical and Electronic Engineering, Toyohashi University of Technology
4th Author's Name Kazuaki Sawada
4th Author's Affiliation Department of Electrical and Electronic Engineering, Toyohashi University of Technology
5th Author's Name Makoto Ishida
5th Author's Affiliation Department of Electrical and Electronic Engineering, Toyohashi University of Technology
Date 2001/11/1
Paper # EID2001-43
Volume (vol) vol.101
Number (no) 404
Page pp.pp.-
#Pages 6
Date of Issue