Presentation 2001/6/14
Exciton emission properties of epitaxial ZnO thin films grown on Si substrate
A. Miyake, H. Kominami, T. Aoki, N. Azuma, Y. Nakanishi, Y. Hatanaka,
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Abstract(in English) ZnO epitaxial thin film could be growth on Si(111) substrate by oxidation of ZnS epitaxial thin film grown on the substrate by electron beam evaporation technique. Near ultraviolet emissions due to exciton emissions of ZnO were also obtained. Growth conditions to obtain the strong ultraviolet emission from the film were investigated. The best emission properties were obiain when the ZnS epitaxial film was grown on Si substrate at a substrate temperature of 270℃ and the film was annealed at 720℃ in O2 flow for at least 2 hours.
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Keyword(in English) ZnO / Oxidation / epitaxial growth / Thin film / exciton emission / Si substrate
Paper # EID2001-12
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Committee EID
Conference Date 2001/6/14(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Exciton emission properties of epitaxial ZnO thin films grown on Si substrate
Sub Title (in English)
Keyword(1) ZnO
Keyword(2) Oxidation
Keyword(3) epitaxial growth
Keyword(4) Thin film
Keyword(5) exciton emission
Keyword(6) Si substrate
1st Author's Name A. Miyake
1st Author's Affiliation Graduate School of Electronic Science and Technology, Shizuoka University()
2nd Author's Name H. Kominami
2nd Author's Affiliation Graduate School of Electronic Science and Technology, Shizuoka University
3rd Author's Name T. Aoki
3rd Author's Affiliation Research Instituie of Electronics, Shizuoka University
4th Author's Name N. Azuma
4th Author's Affiliation Faculty of Engineering, Shizuoka University
5th Author's Name Y. Nakanishi
5th Author's Affiliation Graduate School of Electronic Science and Technology, Shizuoka University:Research Instituie of Electronics, Shizuoka University
6th Author's Name Y. Hatanaka
6th Author's Affiliation Graduate School of Electronic Science and Technology, Shizuoka University:Research Instituie of Electronics, Shizuoka University
Date 2001/6/14
Paper # EID2001-12
Volume (vol) vol.101
Number (no) 118
Page pp.pp.-
#Pages 6
Date of Issue