| Presentation | 2000/10/26 Dependence of structural and luminescent properties of Ga_2O_3 thin films activated with transition metals on preparation method N. Naruse, H. Kominami, T. Nakamura, Y. Nakanishi, Y. Hatanaka, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Ga_2O_3:Cr phosphor films were prepared by electron beam evaporation using GaN:Cr or Ga_2O_3:Cr as evaporation source and by annealing in air. As-deposited films prepared using GaN:Cr source were consisted of islands with around 1μm diameter, and almost of Ga metal and a little oxygen. On the other hand, the films used Ga_2O_3:Cr source showed amorphous structure with good flatness. The srystalline Ga_2O_3:Cr thin films were formed by annealing both films in air at higher than 900℃. The crystallinity of the films was improved with increasing annaling time. These films showed broad emission band with a peak at around 730nm under excitation with 325nm of He-Cd laser and electron beam at 2keV. This broad emission is thoughtto be originated from cluster of Cr^<3+> ions. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | oxide / phosphor / thin film / Ga_2O_3 / transition metal / electron beam evaporation |
| Paper # | EID2000-201 |
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| Conference Information | |
| Committee | EID |
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| Conference Date | 2000/10/26(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Registration To | Electronic Information Displays (EID) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Dependence of structural and luminescent properties of Ga_2O_3 thin films activated with transition metals on preparation method |
| Sub Title (in English) | |
| Keyword(1) | oxide |
| Keyword(2) | phosphor |
| Keyword(3) | thin film |
| Keyword(4) | Ga_2O_3 |
| Keyword(5) | transition metal |
| Keyword(6) | electron beam evaporation |
| 1st Author's Name | N. Naruse |
| 1st Author's Affiliation | Research Institute of Electronics, Shizuoka University() |
| 2nd Author's Name | H. Kominami |
| 2nd Author's Affiliation | Graduate School of Electronic Science and Technology, Shizuoka University |
| 3rd Author's Name | T. Nakamura |
| 3rd Author's Affiliation | Faculty of Engineering, Shizuoka University |
| 4th Author's Name | Y. Nakanishi |
| 4th Author's Affiliation | Research Institute of Electronics, Shizuoka University:Graduate School of Electronic Science and Technology, Shizuoka University |
| 5th Author's Name | Y. Hatanaka |
| 5th Author's Affiliation | Research Institute of Electronics, Shizuoka University:Graduate School of Electronic Science and Technology, Shizuoka University |
| Date | 2000/10/26 |
| Paper # | EID2000-201 |
| Volume (vol) | vol.100 |
| Number (no) | 404 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |