講演名 | 2000/10/13 Investigation on the Simulating Field and Track of Electrons in FFEA , |
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抄録(和) | |
抄録(英) | A distribution graph of electronic potential and track near cathode microtip in FFEA was obtained by finite difference simulating three dimensions for texture of double gate FFEA. It is clearly a result that electrons focusing effect becomes stronger as the focus electrode bias decreases toward the tip potential. If negative focusing electrode bias, we may affirm that the electronic lens repels almost all electrons and finally return to the grid electrode. The potential of gate electrode almost dose not affect the trajectories of electrons from microtip by the quantum tunneling metal cathode, which can only increase electronic amount as voltage applied gate become more higher. The electrons that are of bigger shooting angle will be embarrassed as diameter of focus electrode reduce. |
キーワード(和) | |
キーワード(英) | Finite difference / Focus FEA / Trajectories of electrons / Emitter microtip / Electron beams / Simulating calculation |
資料番号 | EID2000-124 |
発行日 |
研究会情報 | |
研究会 | EID |
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開催期間 | 2000/10/13(から1日開催) |
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講演論文情報詳細 | |
申込み研究会 | Electronic Information Displays (EID) |
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本文の言語 | ENG |
タイトル(和) | |
サブタイトル(和) | |
タイトル(英) | Investigation on the Simulating Field and Track of Electrons in FFEA |
サブタイトル(和) | |
キーワード(1)(和/英) | / Finite difference |
第 1 著者 氏名(和/英) | / Xiaosheng Qu |
第 1 著者 所属(和/英) | Department of electronic engineering, Thsinghua University |
発表年月日 | 2000/10/13 |
資料番号 | EID2000-124 |
巻番号(vol) | vol.100 |
号番号(no) | 356 |
ページ範囲 | pp.- |
ページ数 | 5 |
発行日 |