| Presentation | 2000/10/13 Properties of in-plane-gate transistors for AMLCD A. A. Muravski, S. Ye. Yakovenko, C. Crell, A. D. Wieck, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We present a new kind of thin film transistors(TFT) for active matrix liquid crystal displays(AMLCD), the in- plane-gate(IPG)transistors. Direct current properties of such TFTs are investigated and the model describing their behaviour is proposed. The advantages of IPG transistors are outlined. |
| Keyword(in Japanese) | (See Japanese page) |
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| Paper # | EID2000-118 |
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| Committee | EID |
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| Conference Date | 2000/10/13(1days) |
| Place (in Japanese) | (See Japanese page) |
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| Registration To | Electronic Information Displays (EID) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Properties of in-plane-gate transistors for AMLCD |
| Sub Title (in English) | |
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| 1st Author's Name | A. A. Muravski |
| 1st Author's Affiliation | Institute of Applied Physics Problems() |
| 2nd Author's Name | S. Ye. Yakovenko |
| 2nd Author's Affiliation | Institute of Applied Physics Problems |
| 3rd Author's Name | C. Crell |
| 3rd Author's Affiliation | Infineon Technologies AG, MH E BE |
| 4th Author's Name | A. D. Wieck |
| 4th Author's Affiliation | Institute of Experimental Physics VI, Ruhr-University |
| Date | 2000/10/13 |
| Paper # | EID2000-118 |
| Volume (vol) | vol.100 |
| Number (no) | 356 |
| Page | pp.pp.- |
| #Pages | 6 |
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