Presentation | 2000/10/13 Improvement of uniformity in active-matrix light-emitting diodes Yung-Hui Yeh, Cheng-Xian Han, Chai-Yuan Sheu, Feng-Yu Chuang, Heng-Long Yang, Fens-Chou Ni, Wen-Chun Wang, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | An approach to improve the drive-current uniformity of the low-temperature POly-Si(LTPS)thin film transistors (TFTs)applied to active-matrix organic light-emitting diodes(AMOLED)device was investigated. The non-uniformity feature of LTPS-TFTs is due to the fact that the grain boundaries and sizes of poly-Si are nearly non-controllable during the laser annealing process. In order to obtain the better uniformity of drive current and performance of gray-scale linearity for AMOLED pixels, we suggest that a resistor connected serially to the source terminal of the drive TFT should improve the non-uniformity feature dramatically. Alter measuring the I-V characteristics, a simulation process based on the basic circuit theory was proceeded to calculate the characteristics with a serially connected resistor. The calculated results revealed that the maximum current Variation could be changed from 45%(without a resistor)to 10%(with a serially connected resistor)when the threshold voltage of drive TFT varies 0.3V. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Low temperature poly-Si / thin-film / transistors / active-matrix organic light-emitting / diodes / gray-scale / pixel / resistor |
Paper # | EID2000-110 |
Date of Issue |
Conference Information | |
Committee | EID |
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Conference Date | 2000/10/13(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
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Paper Information | |
Registration To | Electronic Information Displays (EID) |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Improvement of uniformity in active-matrix light-emitting diodes |
Sub Title (in English) | |
Keyword(1) | Low temperature poly-Si |
Keyword(2) | thin-film |
Keyword(3) | transistors |
Keyword(4) | active-matrix organic light-emitting |
Keyword(5) | diodes |
Keyword(6) | gray-scale |
Keyword(7) | pixel |
Keyword(8) | resistor |
1st Author's Name | Yung-Hui Yeh |
1st Author's Affiliation | Electronic Research & Service Organization/Industrial Technology Research Institute, Hsinchu, Taiwan, R. O. C.() |
2nd Author's Name | Cheng-Xian Han |
2nd Author's Affiliation | Electronic Research & Service Organization/Industrial Technology Research Institute, Hsinchu, Taiwan, R. O. C. |
3rd Author's Name | Chai-Yuan Sheu |
3rd Author's Affiliation | Electronic Research & Service Organization/Industrial Technology Research Institute, Hsinchu, Taiwan, R. O. C. |
4th Author's Name | Feng-Yu Chuang |
4th Author's Affiliation | Electronic Research & Service Organization/Industrial Technology Research Institute, Hsinchu, Taiwan, R. O. C. |
5th Author's Name | Heng-Long Yang |
5th Author's Affiliation | Electronic Research & Service Organization/Industrial Technology Research Institute, Hsinchu, Taiwan, R. O. C. |
6th Author's Name | Fens-Chou Ni |
6th Author's Affiliation | Electronic Research & Service Organization/Industrial Technology Research Institute, Hsinchu, Taiwan, R. O. C. |
7th Author's Name | Wen-Chun Wang |
7th Author's Affiliation | Electronic Research & Service Organization/Industrial Technology Research Institute, Hsinchu, Taiwan, R. O. C. |
Date | 2000/10/13 |
Paper # | EID2000-110 |
Volume (vol) | vol.100 |
Number (no) | 356 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |