Presentation 2000/10/13
Simulation Analysis of Negative Resistance Effect in OLED
XIONG Shao-zhen, ZHAO Ying, HAO Yun, WANG Yao, ZHOU Zhen-hua, WU Chun-ya, YU Gang,
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Abstract(in English) A negative resistance phenomenon(NRP)in some polymer light emitting diodes(PLED)was observed and analyzed. This NRP appears in devices after long term storage without bias and disappear after consecutively scan the I-V curves over certain bias level. An internal reverse junction was proposed to interpret this NRP. In addition to the NRP, Hysteresis of I-V data over consecutive runs was also observed, similar to the effect frequently observed in non-crystalline inorganic semiconductors. Such field-drifting characteristics can be explained by carrier trapping mechanism.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Negative resistance phenomenon(NRP) / Field-drift / contact property / F-N model / Trapped carriers / limited / Polymer light emitting diode(PLED)
Paper # EID2000-109
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Committee EID
Conference Date 2000/10/13(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Simulation Analysis of Negative Resistance Effect in OLED
Sub Title (in English)
Keyword(1) Negative resistance phenomenon(NRP)
Keyword(2) Field-drift
Keyword(3) contact property
Keyword(4) F-N model
Keyword(5) Trapped carriers
Keyword(6) limited
Keyword(7) Polymer light emitting diode(PLED)
1st Author's Name XIONG Shao-zhen
1st Author's Affiliation Institute of Photo-electronics, Nankai University, Key Laboratory of Opto-electronics Information Technical Science, EMC. China Laboratory of Semiconductor Materials Science()
2nd Author's Name ZHAO Ying
2nd Author's Affiliation Institute of Photo-electronics, Nankai University, Key Laboratory of Opto-electronics Information Technical Science, EMC. China Laboratory of Semiconductor Materials Science
3rd Author's Name HAO Yun
3rd Author's Affiliation Institute of Photo-electronics, Nankai University, Key Laboratory of Opto-electronics Information Technical Science, EMC. China Laboratory of Semiconductor Materials Science
4th Author's Name WANG Yao
4th Author's Affiliation Institute of Photo-electronics, Nankai University, Key Laboratory of Opto-electronics Information Technical Science, EMC. China Laboratory of Semiconductor Materials Science
5th Author's Name ZHOU Zhen-hua
5th Author's Affiliation Institute of Photo-electronics, Nankai University, Key Laboratory of Opto-electronics Information Technical Science, EMC. China Laboratory of Semiconductor Materials Science
6th Author's Name WU Chun-ya
6th Author's Affiliation Institute of Photo-electronics, Nankai University, Key Laboratory of Opto-electronics Information Technical Science, EMC. China Laboratory of Semiconductor Materials Science
7th Author's Name YU Gang
7th Author's Affiliation UNIAX Corporation
Date 2000/10/13
Paper # EID2000-109
Volume (vol) vol.100
Number (no) 356
Page pp.pp.-
#Pages 6
Date of Issue