| Presentation | 2000/6/16 Photocurrent Amplification Using Lateral Bipolar Effect of SOI MOSFET Structure Yuko Uryu, Tanemasa Asano, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A new photodetection device composed of an SOI MOSFET and a photodiode is proposed and the fundamental operation of the device is experimentally studied. The photodiode is connected to the floating body of the SOI MOSFET. This device was targeted at amplification of diode photocurrent by using the lateral bipolar action of the SOI MOSFEAT. We have investigated devices composed of a partially depleted p-channel SOI MOSFET and a n^+p photodiode which was formed in the substrate Si of a SIMOX wafer. Photo-response in terms of wavelength and intensity, and current gain of the composite device are investigated. It is demonstrated that the current amplification factor increases with decreasing the gate length of the SOI MOSFET and the drain current can be about 70 times as much as the diode photocurrent when the gate length is 0.8μm. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | photodetection device / composite device / SOI / MOSFET / lateral bipolar transistor / floating body effect |
| Paper # | EID2000-20 |
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| Conference Information | |
| Committee | EID |
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| Conference Date | 2000/6/16(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Electronic Information Displays (EID) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Photocurrent Amplification Using Lateral Bipolar Effect of SOI MOSFET Structure |
| Sub Title (in English) | |
| Keyword(1) | photodetection device |
| Keyword(2) | composite device |
| Keyword(3) | SOI |
| Keyword(4) | MOSFET |
| Keyword(5) | lateral bipolar transistor |
| Keyword(6) | floating body effect |
| 1st Author's Name | Yuko Uryu |
| 1st Author's Affiliation | Center for Microelectronic Systems, Kyushu Institute of Technology() |
| 2nd Author's Name | Tanemasa Asano |
| 2nd Author's Affiliation | Center for Microelectronic Systems, Kyushu Institute of Technology |
| Date | 2000/6/16 |
| Paper # | EID2000-20 |
| Volume (vol) | vol.100 |
| Number (no) | 133 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |