Presentation 2000/6/16
Photocurrent Amplification Using Lateral Bipolar Effect of SOI MOSFET Structure
Yuko Uryu, Tanemasa Asano,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) A new photodetection device composed of an SOI MOSFET and a photodiode is proposed and the fundamental operation of the device is experimentally studied. The photodiode is connected to the floating body of the SOI MOSFET. This device was targeted at amplification of diode photocurrent by using the lateral bipolar action of the SOI MOSFEAT. We have investigated devices composed of a partially depleted p-channel SOI MOSFET and a n^+p photodiode which was formed in the substrate Si of a SIMOX wafer. Photo-response in terms of wavelength and intensity, and current gain of the composite device are investigated. It is demonstrated that the current amplification factor increases with decreasing the gate length of the SOI MOSFET and the drain current can be about 70 times as much as the diode photocurrent when the gate length is 0.8μm.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) photodetection device / composite device / SOI / MOSFET / lateral bipolar transistor / floating body effect
Paper # EID2000-20
Date of Issue

Conference Information
Committee EID
Conference Date 2000/6/16(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Electronic Information Displays (EID)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Photocurrent Amplification Using Lateral Bipolar Effect of SOI MOSFET Structure
Sub Title (in English)
Keyword(1) photodetection device
Keyword(2) composite device
Keyword(3) SOI
Keyword(4) MOSFET
Keyword(5) lateral bipolar transistor
Keyword(6) floating body effect
1st Author's Name Yuko Uryu
1st Author's Affiliation Center for Microelectronic Systems, Kyushu Institute of Technology()
2nd Author's Name Tanemasa Asano
2nd Author's Affiliation Center for Microelectronic Systems, Kyushu Institute of Technology
Date 2000/6/16
Paper # EID2000-20
Volume (vol) vol.100
Number (no) 133
Page pp.pp.-
#Pages 6
Date of Issue