Presentation 2000/6/16
Excimer Laser doping for compound semiconductor and Study of the pixel technique for image detector
A. Nakamura, D. Noda, M. Niraula, T. Aoki, Y. Hatanaka,
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Abstract(in English) II-VI compound semiconductor CdTe is an attractive semiconductor material for applications to solid-state high-energy x-ray and γ-ray imaging systems. We have studied the laser doping technique for fabrication to reticulated detectors. This technique is suitable for the spatially patterned doping to be applied for the fabrication of integrated two-dimensional imaging device. Na_2Te, Sb as p-type dopants and In as n-type dopant for the single crystal CbTe were examined by Eximer laser doping technique. The Hall concentration was +1.39e+19/cm^3 and Electron concentration was -8.95e+18/cm^3.
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Keyword(in English) Excimer laser / patterned doping / Na_2Te / Sb / In
Paper # EID2000-18
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Committee EID
Conference Date 2000/6/16(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) Excimer Laser doping for compound semiconductor and Study of the pixel technique for image detector
Sub Title (in English)
Keyword(1) Excimer laser
Keyword(2) patterned doping
Keyword(3) Na_2Te
Keyword(4) Sb
Keyword(5) In
1st Author's Name A. Nakamura
1st Author's Affiliation Research Institute of Electronics Shizuoka University()
2nd Author's Name D. Noda
2nd Author's Affiliation Research Institute of Electronics Shizuoka University
3rd Author's Name M. Niraula
3rd Author's Affiliation Research Institute of Electronics Shizuoka University
4th Author's Name T. Aoki
4th Author's Affiliation Research Institute of Electronics Shizuoka University
5th Author's Name Y. Hatanaka
5th Author's Affiliation Research Institute of Electronics Shizuoka University
Date 2000/6/16
Paper # EID2000-18
Volume (vol) vol.100
Number (no) 133
Page pp.pp.-
#Pages 6
Date of Issue