| Presentation | 2000/6/16 Correlation between ballistic electron emission characteristics and photoluminescent properties of cold cathode based on porous polycrystalline silicon Tsutomu Ichihara, Takuya Komoda, Nobuyoshi Koshida, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | It is shown that is a strong correlation between the emission efficiency and silicon nanostructure in a porous polysilicon (PPS) cold cathode. Nondoped polysilicon layer is formed on an n-type<100>silicon wafer and anodized in a solution of HF(50%):ethanol=1:1 under illumination by a 500 Wtungsten lamp. Subsequently, a PPS layer is oxidized in a rapid thermal oxidation (RTO) furnace for 1 hour at a temperature of 900 C.A thin Au film is deposited onto the PPS layer as a positive electrode. The silicon nanostructures are evaluated by photoluminescent spectra. The PPS which has luminescent peak from Si nanocrystallites shows higher emission efficiency. This result supports our multitunneling model which leads to generate quasi-ballistic electron in a PPS cold cathode. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | FED / cold cathode / ballistic electron emission / nanocrystalline Si / photo luminescence |
| Paper # | EID2000-12 |
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| Conference Information | |
| Committee | EID |
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| Conference Date | 2000/6/16(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electronic Information Displays (EID) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Correlation between ballistic electron emission characteristics and photoluminescent properties of cold cathode based on porous polycrystalline silicon |
| Sub Title (in English) | |
| Keyword(1) | FED |
| Keyword(2) | cold cathode |
| Keyword(3) | ballistic electron emission |
| Keyword(4) | nanocrystalline Si |
| Keyword(5) | photo luminescence |
| 1st Author's Name | Tsutomu Ichihara |
| 1st Author's Affiliation | Advanced Technology Research Laboratory, Matsushita Electric Works, Ltd.() |
| 2nd Author's Name | Takuya Komoda |
| 2nd Author's Affiliation | Advanced Technology Research Laboratory, Matsushita Electric Works, Ltd. |
| 3rd Author's Name | Nobuyoshi Koshida |
| 3rd Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology |
| Date | 2000/6/16 |
| Paper # | EID2000-12 |
| Volume (vol) | vol.100 |
| Number (no) | 133 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |