| Presentation | 2000/1/27 Blue SrS:Cu, Ag thin film elctroluminescent devices prepared by hot-wall deposition using successive source supply Toshihiko Fujiwara, Ryu Ohsawa, Haruki Fukada, Koutoku Ohmi, Shosaku Tanaka, Hiroshi Kobayashi, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | To improve a luminescent efficiency of a blue SrS:Cu, Ag EL phosphor, a dependence of Cu concentration and post-deposition annealing on crystallographic and photoluminescent(PL)characteristics have been investigated for SrS:Cu thin films prepared by hot-wall deposition using successive source supply. As-deposited SrS:Cu thin films show a blue PL emission peaking at 472 nm. The PL intensity is increased with increasing Cu concentration with keeping the same PL spectrum. The PL intensity is further increased by about 6 times by annealing at 900 ℃ for 10 min, and the peak is also shifted to longer wavelength by 15 nm. It is thought that the annealing gives rise to Cu diffusion into SrS lattice rather than the improvement of the crystallinity. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SrS:Cu, Ag / Thin film EL / Blue EL phosphor / Hot-wall deposition / annealing |
| Paper # | EID99-82 |
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| Conference Information | |
| Committee | EID |
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| Conference Date | 2000/1/27(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electronic Information Displays (EID) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Blue SrS:Cu, Ag thin film elctroluminescent devices prepared by hot-wall deposition using successive source supply |
| Sub Title (in English) | |
| Keyword(1) | SrS:Cu, Ag |
| Keyword(2) | Thin film EL |
| Keyword(3) | Blue EL phosphor |
| Keyword(4) | Hot-wall deposition |
| Keyword(5) | annealing |
| 1st Author's Name | Toshihiko Fujiwara |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering, Tottori University() |
| 2nd Author's Name | Ryu Ohsawa |
| 2nd Author's Affiliation | Department of Electrical and Electronic Engineering, Tottori University |
| 3rd Author's Name | Haruki Fukada |
| 3rd Author's Affiliation | Department of Electrical and Electronic Engineering, Tottori University |
| 4th Author's Name | Koutoku Ohmi |
| 4th Author's Affiliation | Department of Electrical and Electronic Engineering, Tottori University |
| 5th Author's Name | Shosaku Tanaka |
| 5th Author's Affiliation | Department of Electrical and Electronic Engineering, Tottori University |
| 6th Author's Name | Hiroshi Kobayashi |
| 6th Author's Affiliation | Department of Electrical and Electronic Engineering, Tottori University |
| Date | 2000/1/27 |
| Paper # | EID99-82 |
| Volume (vol) | vol.99 |
| Number (no) | 597 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |