Presentation 2000/1/27
Stability of High Frequency Drived Oxide Phosphor TFEL Devices using a Thick Ceramic Insulator
Toshikuni NAKATANI, Shingo SUZUKI, Toshihiro MIYATA, Tadatsugu MINAMI,
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Abstract(in English) The stability of various oxide phosphors used as the emitting layer in high-frequency driven TFEL devices is reported. Thick ceramic-insulating-layer-type TFEL devices with a Zn_2Si_xGe_<1-x>O_4 : Mn or Ga_2O_3 : Mn thin-film emitting layer were life-tested under 10 kHz sinusoidal wave voltage driving. An unsealed Ga_2O_3 : Mn TFEL device exhibited long term stable operation of more than 10000 hours at room temperature in the atmosphere.
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Keyword(in English) electroluminescence / TFELdevice / phosphor / oxide phosphor / Ga_2O_3 / ceramic
Paper # EID99-81
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Committee EID
Conference Date 2000/1/27(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Stability of High Frequency Drived Oxide Phosphor TFEL Devices using a Thick Ceramic Insulator
Sub Title (in English)
Keyword(1) electroluminescence
Keyword(2) TFELdevice
Keyword(3) phosphor
Keyword(4) oxide phosphor
Keyword(5) Ga_2O_3
Keyword(6) ceramic
1st Author's Name Toshikuni NAKATANI
1st Author's Affiliation Electron Device System Laboratory, Kanazawa Institute of Technology()
2nd Author's Name Shingo SUZUKI
2nd Author's Affiliation Electron Device System Laboratory, Kanazawa Institute of Technology
3rd Author's Name Toshihiro MIYATA
3rd Author's Affiliation Electron Device System Laboratory, Kanazawa Institute of Technology
4th Author's Name Tadatsugu MINAMI
4th Author's Affiliation Electron Device System Laboratory, Kanazawa Institute of Technology
Date 2000/1/27
Paper # EID99-81
Volume (vol) vol.99
Number (no) 597
Page pp.pp.-
#Pages 6
Date of Issue