Presentation 2000/1/27
Effects of buffer layer for TFEL devices
Tokihiko OGI, Noboru MIURA, Hironaga MATSUMOTO, Ryoutaro NAKANO,
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Abstract(in English) In the EL device with the double-insulating-layer structure, It was investigated whether ZnS buffer layer acted as a career injection layer for emission layer. TFEL devices used with Al^<3+>, Cu^<1+> and Li^<1+> doped ZnS buffer layer were fabricated. Transient characteristics were also measured for unsymmetrical structure. From these results, it is considered that the impurities doped ZnS buffer layer acts as the career injection layer, and luminance was increased due to the injection career from buffer layer.
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Keyword(in English) EL / Impurities / ZnS / Buffer layer
Paper # EID99-76
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Committee EID
Conference Date 2000/1/27(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) Effects of buffer layer for TFEL devices
Sub Title (in English)
Keyword(1) EL
Keyword(2) Impurities
Keyword(3) ZnS
Keyword(4) Buffer layer
1st Author's Name Tokihiko OGI
1st Author's Affiliation School of Science & Technology, MEIJI University()
2nd Author's Name Noboru MIURA
2nd Author's Affiliation School of Science & Technology, MEIJI University
3rd Author's Name Hironaga MATSUMOTO
3rd Author's Affiliation School of Science & Technology, MEIJI University
4th Author's Name Ryoutaro NAKANO
4th Author's Affiliation School of Science & Technology, MEIJI University
Date 2000/1/27
Paper # EID99-76
Volume (vol) vol.99
Number (no) 597
Page pp.pp.-
#Pages 6
Date of Issue