Presentation | 2000/1/27 Effects of buffer layer for TFEL devices Tokihiko OGI, Noboru MIURA, Hironaga MATSUMOTO, Ryoutaro NAKANO, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | In the EL device with the double-insulating-layer structure, It was investigated whether ZnS buffer layer acted as a career injection layer for emission layer. TFEL devices used with Al^<3+>, Cu^<1+> and Li^<1+> doped ZnS buffer layer were fabricated. Transient characteristics were also measured for unsymmetrical structure. From these results, it is considered that the impurities doped ZnS buffer layer acts as the career injection layer, and luminance was increased due to the injection career from buffer layer. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | EL / Impurities / ZnS / Buffer layer |
Paper # | EID99-76 |
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Committee | EID |
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Conference Date | 2000/1/27(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Electronic Information Displays (EID) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Effects of buffer layer for TFEL devices |
Sub Title (in English) | |
Keyword(1) | EL |
Keyword(2) | Impurities |
Keyword(3) | ZnS |
Keyword(4) | Buffer layer |
1st Author's Name | Tokihiko OGI |
1st Author's Affiliation | School of Science & Technology, MEIJI University() |
2nd Author's Name | Noboru MIURA |
2nd Author's Affiliation | School of Science & Technology, MEIJI University |
3rd Author's Name | Hironaga MATSUMOTO |
3rd Author's Affiliation | School of Science & Technology, MEIJI University |
4th Author's Name | Ryoutaro NAKANO |
4th Author's Affiliation | School of Science & Technology, MEIJI University |
Date | 2000/1/27 |
Paper # | EID99-76 |
Volume (vol) | vol.99 |
Number (no) | 597 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |