| Presentation | 1999/7/9 Optimaization of preparing conditions of high-luminance TFEL devices using Ga_20_3:Mn thin films prepared by magnetron sputtering Toshihiro MIYATA, Toshikuni NAKATANI, Tadatsugu MINAMI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | High-luminance green-emitting TFEL devices have been fabricated using a Ga_2O_3:Mn phosphor thin-film emitting layer and a thick BaTiO_3 ceramic sheet insulating layer. The EL characteristics of TFEL devices with a Ga_2O_3: Mn phosphor thin-film emitting layer prepared by rf magnetron sputtering were strongly dependent on the preparing conditions of Ga_2O_3:Mn thin-film. A lumirtance of 7.54cd/m^2 was obtained in a green-emitting TFEL device with an as-deposited Ga_2O_3:Mn phosphor thin-film emitting layer prepared at substrate temperature of 365℃. High luminaces of 627 and 167 cd/m^2 were obtained in a device using Ga_2O_3: Mn phosphor thin-film postannealed at 1020℃ and prepared at substrate temperature of 390℃, when driven at 1kHz and 60Hz, respectively. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | electroluminescence / Ga_2O_3:Mn / rf magnetron sputtering / oxide phosphor / TFEL device |
| Paper # | EID99-44 |
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| Conference Information | |
| Committee | EID |
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| Conference Date | 1999/7/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electronic Information Displays (EID) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Optimaization of preparing conditions of high-luminance TFEL devices using Ga_20_3:Mn thin films prepared by magnetron sputtering |
| Sub Title (in English) | |
| Keyword(1) | electroluminescence |
| Keyword(2) | Ga_2O_3:Mn |
| Keyword(3) | rf magnetron sputtering |
| Keyword(4) | oxide phosphor |
| Keyword(5) | TFEL device |
| 1st Author's Name | Toshihiro MIYATA |
| 1st Author's Affiliation | Electron Device System Laboratory, Kanazawa Institute of Technology() |
| 2nd Author's Name | Toshikuni NAKATANI |
| 2nd Author's Affiliation | Electron Device System Laboratory, Kanazawa Institute of Technology |
| 3rd Author's Name | Tadatsugu MINAMI |
| 3rd Author's Affiliation | Electron Device System Laboratory, Kanazawa Institute of Technology |
| Date | 1999/7/9 |
| Paper # | EID99-44 |
| Volume (vol) | vol.99 |
| Number (no) | 171 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |