Presentation 1999/3/19
A BCE-type α-Si TFT with an Island Metal Masking Structure
J. H. Chen, T. H. Huang, Y. E. Chen,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) A new back channel etched hydrogenated thin film transistor (TFT) device with an island metal masking structure has been proposed and fabricated. The TFT structure contained a continue layer deposition process of SiNx/a-Si/n+a-Si/Metal, and finally resulted in an additional metal layer between source/drain metals and island. The channel metal was etched in the S/D metal mask patterning simultaneously. Results showed the newly designed TFT device exhibiting some characteristics: (i) good S/D metal/n+a-Si contact; (ii) prevention of plasma damage during processing especially for oxygen plasma ashing and (iii) without additional mask. These advantages will be helpful for a wider range of process window in large area mass production a-Si TFT fabrications.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) thin film tranasistor (TFT) / island metal masking / plasma damage
Paper # EID98-253
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Committee EID
Conference Date 1999/3/19(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A BCE-type α-Si TFT with an Island Metal Masking Structure
Sub Title (in English)
Keyword(1) thin film tranasistor (TFT)
Keyword(2) island metal masking
Keyword(3) plasma damage
1st Author's Name J. H. Chen
1st Author's Affiliation Electronics Research and Service Organization, Industrial Technology Research Institute()
2nd Author's Name T. H. Huang
2nd Author's Affiliation Electronics Research and Service Organization, Industrial Technology Research Institute
3rd Author's Name Y. E. Chen
3rd Author's Affiliation Electronics Research and Service Organization, Industrial Technology Research Institute
Date 1999/3/19
Paper # EID98-253
Volume (vol) vol.98
Number (no) 666
Page pp.pp.-
#Pages 4
Date of Issue