Presentation | 1999/3/19 A BCE-type α-Si TFT with an Island Metal Masking Structure J. H. Chen, T. H. Huang, Y. E. Chen, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A new back channel etched hydrogenated thin film transistor (TFT) device with an island metal masking structure has been proposed and fabricated. The TFT structure contained a continue layer deposition process of SiNx/a-Si/n+a-Si/Metal, and finally resulted in an additional metal layer between source/drain metals and island. The channel metal was etched in the S/D metal mask patterning simultaneously. Results showed the newly designed TFT device exhibiting some characteristics: (i) good S/D metal/n+a-Si contact; (ii) prevention of plasma damage during processing especially for oxygen plasma ashing and (iii) without additional mask. These advantages will be helpful for a wider range of process window in large area mass production a-Si TFT fabrications. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | thin film tranasistor (TFT) / island metal masking / plasma damage |
Paper # | EID98-253 |
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Conference Information | |
Committee | EID |
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Conference Date | 1999/3/19(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
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Registration To | Electronic Information Displays (EID) |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | A BCE-type α-Si TFT with an Island Metal Masking Structure |
Sub Title (in English) | |
Keyword(1) | thin film tranasistor (TFT) |
Keyword(2) | island metal masking |
Keyword(3) | plasma damage |
1st Author's Name | J. H. Chen |
1st Author's Affiliation | Electronics Research and Service Organization, Industrial Technology Research Institute() |
2nd Author's Name | T. H. Huang |
2nd Author's Affiliation | Electronics Research and Service Organization, Industrial Technology Research Institute |
3rd Author's Name | Y. E. Chen |
3rd Author's Affiliation | Electronics Research and Service Organization, Industrial Technology Research Institute |
Date | 1999/3/19 |
Paper # | EID98-253 |
Volume (vol) | vol.98 |
Number (no) | 666 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |