Presentation 1999/3/19
Newly developed low power impregnated cathode for CRT's
H. Nakamura, K Sumi, S. Mitsuhashi, M Mizuki, K. Ebe,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) In the development of low power Impregnated cathode, to decrease heater power the Taguchi Method has been used. The newly developed low power impregnated cathode can be applied to a new electron gun -we call this technology "L-SAGIC"- enabling the CRT'S to achieve good performance, high resolution and brightness. * Low power cathode type SAGIC** ** Small Aperture G1 with Inpregnated Cathode
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Low power / Impregnated cathode / Taguchi methode / Cathode structure, L-SAGIC
Paper # EID98-239
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Committee EID
Conference Date 1999/3/19(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Newly developed low power impregnated cathode for CRT's
Sub Title (in English)
Keyword(1) Low power
Keyword(2) Impregnated cathode
Keyword(3) Taguchi methode
Keyword(4) Cathode structure, L-SAGIC
1st Author's Name H. Nakamura
1st Author's Affiliation SONY Corp., Display Device Process Engineering Department()
2nd Author's Name K Sumi
2nd Author's Affiliation SONY Corp., Display Device Process Engineering Department
3rd Author's Name S. Mitsuhashi
3rd Author's Affiliation SONY Corp., Display Device Process Engineering Department
4th Author's Name M Mizuki
4th Author's Affiliation Computer Display Device Division , Display Business Group. Display Company
5th Author's Name K. Ebe
5th Author's Affiliation Computer Display Device Division , Display Business Group. Display Company
Date 1999/3/19
Paper # EID98-239
Volume (vol) vol.98
Number (no) 666
Page pp.pp.-
#Pages 5
Date of Issue