Presentation 1999/3/18
Fabrication and estimation of characteristics for Nb-silicide FEAs
Jae Seok Park, Sanjo Lee, Byeong Kwon Ju, Jin Jang, D. Jeon, Myung Hwan Oh,
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Abstract(in English) Electron emission currents and stability in the silicon-tip field emission arrays (FEAs) have bee improved by silicide formation on silicon using Nb (Niobium). The formation of Nb-silicide was confirmed by X-Ray Diffraction (XRD) data. The turn-on voltage of silicon-tip FEAs was decreased from 64 to 47V and the emission current fluctuation was decreased from 5% to 2%.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Silicon-Tip / Field Emission Arrays (FEAs) / Nb (Niobium)-Silicide.
Paper # EID98-207
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Conference Date 1999/3/18(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication and estimation of characteristics for Nb-silicide FEAs
Sub Title (in English)
Keyword(1) Silicon-Tip
Keyword(2) Field Emission Arrays (FEAs)
Keyword(3) Nb (Niobium)-Silicide.
1st Author's Name Jae Seok Park
1st Author's Affiliation Electronic Materials and Devices Research Center,KIST()
2nd Author's Name Sanjo Lee
2nd Author's Affiliation Electronic Materials and Devices Research Center,KIST
3rd Author's Name Byeong Kwon Ju
3rd Author's Affiliation Electronic Materials and Devices Research Center,KIST
4th Author's Name Jin Jang
4th Author's Affiliation Department of Physics, Kyung Hee University
5th Author's Name D. Jeon
5th Author's Affiliation Department of Physics, Myong Ji University
6th Author's Name Myung Hwan Oh
6th Author's Affiliation Electronic Materials and Devices Research Center,KIST
Date 1999/3/18
Paper # EID98-207
Volume (vol) vol.98
Number (no) 665
Page pp.pp.-
#Pages 4
Date of Issue