| Presentation | 1999/1/22 EL characteristics of high frequency driven oxide phosphor thin film electroluminescent devices using a thick ceramic sheet insulating layer Yoshihiro KUBOTA, Toshihiro MIYATA, Tadatsugu MINAMI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The EL performance of high frequency driven oxide phosphor TFEL devices using a thick BaTiO_3 ceramic sheet insulator have been demonstrated. The EL characteristics such as luminance, threshold voltage and luminance increase in relation to applied voltage always improved as the sinusoidal wave voltage driving frequency was increased from 60Hz to 10kHz. Luminaces above 1000 cd/m^2 for green emission and 300 cd/m^2 for red emission were obtained in ZnGa_2O_4 : Mn, Ga_2O_3 : Mn and Ga_2O_3 : Cr TFEL devices, respectively, driven with a voltage below 141V at 10kHz. The Ga_2O_3 : Mn TFEL device driven at a frequency 10kHz exhibited a long term stable operation of more than 3000 hours. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | electroluminescence / high frequency driving / rf magnetron sputtering / dip-coat method / oxide phosphor / TFEL device |
| Paper # | EID98-117 |
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| Conference Information | |
| Committee | EID |
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| Conference Date | 1999/1/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Electronic Information Displays (EID) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | EL characteristics of high frequency driven oxide phosphor thin film electroluminescent devices using a thick ceramic sheet insulating layer |
| Sub Title (in English) | |
| Keyword(1) | electroluminescence |
| Keyword(2) | high frequency driving |
| Keyword(3) | rf magnetron sputtering |
| Keyword(4) | dip-coat method |
| Keyword(5) | oxide phosphor |
| Keyword(6) | TFEL device |
| 1st Author's Name | Yoshihiro KUBOTA |
| 1st Author's Affiliation | Electron Device System Laboratory, Kanazawa Institute of Technology() |
| 2nd Author's Name | Toshihiro MIYATA |
| 2nd Author's Affiliation | Electron Device System Laboratory, Kanazawa Institute of Technology |
| 3rd Author's Name | Tadatsugu MINAMI |
| 3rd Author's Affiliation | Electron Device System Laboratory, Kanazawa Institute of Technology |
| Date | 1999/1/22 |
| Paper # | EID98-117 |
| Volume (vol) | vol.98 |
| Number (no) | 550 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |