| Presentation | 1999/1/21 Emission Current Controllable Si Field Emitter K. Ozawa, K. Tokunaga, S. Kanemaru, T. Matsukawa, J. Itoh, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A new Si field emitter tip with metal-oxide-semiconductor field-effect-transistor(MOSFET)structure was fabricated and demonstrated. In the present device, a well-sharpened Si tip was made junst on the drain of the MOSFET and two gates were made of poly-Si layer between the drain and the source. Among the gates, the one having an aperture surrounding the tip was mainly used as an extraction electrode and the other was used as an FET gate. By employing the poly-Si gates, the fabrication process was optimized especially in the activation temperature after ion implantation doping and consequently, the MOSFET characteristics was much improved. The fabrication process and emission characteristics are described in detail. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | FED / Field Emitter / MOSFET / Poly-Si Gate / LSI |
| Paper # | EID98-93 |
| Date of Issue |
| Conference Information | |
| Committee | EID |
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| Conference Date | 1999/1/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electronic Information Displays (EID) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Emission Current Controllable Si Field Emitter |
| Sub Title (in English) | |
| Keyword(1) | FED |
| Keyword(2) | Field Emitter |
| Keyword(3) | MOSFET |
| Keyword(4) | Poly-Si Gate |
| Keyword(5) | LSI |
| 1st Author's Name | K. Ozawa |
| 1st Author's Affiliation | Musashi Institute of Technology() |
| 2nd Author's Name | K. Tokunaga |
| 2nd Author's Affiliation | Tokai University |
| 3rd Author's Name | S. Kanemaru |
| 3rd Author's Affiliation | Electrotechnical Laboratry |
| 4th Author's Name | T. Matsukawa |
| 4th Author's Affiliation | Electrotechnical Laboratry |
| 5th Author's Name | J. Itoh |
| 5th Author's Affiliation | Electrotechnical Laboratry |
| Date | 1999/1/21 |
| Paper # | EID98-93 |
| Volume (vol) | vol.98 |
| Number (no) | 549 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |