| Presentation | 1999/1/21 Emission characteristics of thin-film top-layer scandate cathodes Eiichirou Uda, Osamu Nakamura, Sadao Matsumoto, Toshiharu Higuchi, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We investigated top-layer scandate cathodes, which are the most promising of scandate cathodes. Among the cathodes which we prepared with a layer of various thickness, the best pulse emission of 80A/cm^2 at 1300K was recorded with cathodes having a top-layer consisting of a Sc_2O_3 layer 2 nm thick on a W layer 8 nm thick. The emission variation of these cathodes was evaluated in life tests. The life characteristics were good in both diode and triode evaluation. We also determined diffusion coefficients of W and Sc_2O_3 with unporous W pellets covered with Sc_2O_3 and W layer. Variation of surface concentrations of these pellets during life tests were measured using Auger electron spectroscopy. The diffusion coefficients were 6.4×10^<-19>, 1.0×10^<-18>, and 1.6×10^<-18>cm^2/s at 1220K, 1300K, and 1370K, respectively. Detailed observation of Auger spectra suggests unchanged chemical states of O, Sc, and W during diffusion process. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Thermionic electron emission / scandate cathode / thin film / bulk diffusion / scandium oxide / tungsten |
| Paper # | EID98-90 |
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| Conference Information | |
| Committee | EID |
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| Conference Date | 1999/1/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Registration To | Electronic Information Displays (EID) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Emission characteristics of thin-film top-layer scandate cathodes |
| Sub Title (in English) | |
| Keyword(1) | Thermionic electron emission |
| Keyword(2) | scandate cathode |
| Keyword(3) | thin film |
| Keyword(4) | bulk diffusion |
| Keyword(5) | scandium oxide |
| Keyword(6) | tungsten |
| 1st Author's Name | Eiichirou Uda |
| 1st Author's Affiliation | Electron tubes and devices division, Toshiba corporation() |
| 2nd Author's Name | Osamu Nakamura |
| 2nd Author's Affiliation | Electron tubes and devices division, Toshiba corporation |
| 3rd Author's Name | Sadao Matsumoto |
| 3rd Author's Affiliation | Electron tubes and devices division, Toshiba corporation |
| 4th Author's Name | Toshiharu Higuchi |
| 4th Author's Affiliation | Electron tubes and devices division, Toshiba corporation |
| Date | 1999/1/21 |
| Paper # | EID98-90 |
| Volume (vol) | vol.98 |
| Number (no) | 549 |
| Page | pp.pp.- |
| #Pages | 6 |
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