Presentation 1999/1/21
Preparation of SiC thin films using HMDS
T. Muramatsu, Xu Y, T. Aoki, Y. Hatanaka,
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Abstract(in English) SiC thin films were deposited by plasma CVD and remote plasma CVD method using hexamethyledisilane. It was found that the adhesibility of SiC thin film on the plastic substrate increases with the surface energy of the substrate which, in turn, can be increased by the Oxygen plasma treatment. Deposition rate was higher for the films deposited at room temperature using 50W rf power in plasma CVD method with a pressure of 1.0 Torr. The deposited films were useful for rejecting UV radiation.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Plasma CVD / Remote Plasma CVD / Hexamethyldisilane / SiC film / Surface energy
Paper # EID98-89
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Committee EID
Conference Date 1999/1/21(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Preparation of SiC thin films using HMDS
Sub Title (in English)
Keyword(1) Plasma CVD
Keyword(2) Remote Plasma CVD
Keyword(3) Hexamethyldisilane
Keyword(4) SiC film
Keyword(5) Surface energy
1st Author's Name T. Muramatsu
1st Author's Affiliation Research Institute of Electronics, Shizuoka University()
2nd Author's Name Xu Y
2nd Author's Affiliation Graduate School of Electronic Science and Technology, Shizuoka University
3rd Author's Name T. Aoki
3rd Author's Affiliation Graduate School of Electronic Science and Technology, Shizuoka University
4th Author's Name Y. Hatanaka
4th Author's Affiliation Research Institute of Electronics, Shizuoka University:Graduate School of Electronic Science and Technology, Shizuoka University
Date 1999/1/21
Paper # EID98-89
Volume (vol) vol.98
Number (no) 549
Page pp.pp.-
#Pages 6
Date of Issue