Presentation | 1999/1/21 Preparation of SiC thin films using HMDS T. Muramatsu, Xu Y, T. Aoki, Y. Hatanaka, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | SiC thin films were deposited by plasma CVD and remote plasma CVD method using hexamethyledisilane. It was found that the adhesibility of SiC thin film on the plastic substrate increases with the surface energy of the substrate which, in turn, can be increased by the Oxygen plasma treatment. Deposition rate was higher for the films deposited at room temperature using 50W rf power in plasma CVD method with a pressure of 1.0 Torr. The deposited films were useful for rejecting UV radiation. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Plasma CVD / Remote Plasma CVD / Hexamethyldisilane / SiC film / Surface energy |
Paper # | EID98-89 |
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Conference Information | |
Committee | EID |
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Conference Date | 1999/1/21(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electronic Information Displays (EID) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Preparation of SiC thin films using HMDS |
Sub Title (in English) | |
Keyword(1) | Plasma CVD |
Keyword(2) | Remote Plasma CVD |
Keyword(3) | Hexamethyldisilane |
Keyword(4) | SiC film |
Keyword(5) | Surface energy |
1st Author's Name | T. Muramatsu |
1st Author's Affiliation | Research Institute of Electronics, Shizuoka University() |
2nd Author's Name | Xu Y |
2nd Author's Affiliation | Graduate School of Electronic Science and Technology, Shizuoka University |
3rd Author's Name | T. Aoki |
3rd Author's Affiliation | Graduate School of Electronic Science and Technology, Shizuoka University |
4th Author's Name | Y. Hatanaka |
4th Author's Affiliation | Research Institute of Electronics, Shizuoka University:Graduate School of Electronic Science and Technology, Shizuoka University |
Date | 1999/1/21 |
Paper # | EID98-89 |
Volume (vol) | vol.98 |
Number (no) | 549 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |