| Presentation | 1999/1/21 High Concentration p-type Doping of ZnSe by Excimer Laser T. Aoki, H. Yamamoto, Y. Aoki, Y. Nakanishi, Y. Hatanaka, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | High Concentration p-type doping of ZnSe was carried out by dopant diffusion using excimer laser radiation. The Na doped p-type ZnSe was formed by excimer laser pulse to the sample surface after deposition of Na_2Se for dopant source on ZnSe surface. We have reported that low resistivity ZnSe layer(holl concentration:5×10^<19>cm^<-3>, mobility:8.1cmV^<-1>S^<-1>)and ohmic contact between Na doped ZnSe and gold electrode were obtained by laser doping with 550℃, 10min of thermal annealing in a furnace. The Na doping was also observed without thermal annealing and the ZnSe diode prepared by this method could be injected about 80Acm-2 of current. It was found that 1500K of temperature increment at sample surface by excimer laser radiation from result of computer simulation. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Excimer laser / p-ZnSe / Laser doping / Ohmic contact / Surface heating |
| Paper # | EID98-88 |
| Date of Issue |
| Conference Information | |
| Committee | EID |
|---|---|
| Conference Date | 1999/1/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electronic Information Displays (EID) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High Concentration p-type Doping of ZnSe by Excimer Laser |
| Sub Title (in English) | |
| Keyword(1) | Excimer laser |
| Keyword(2) | p-ZnSe |
| Keyword(3) | Laser doping |
| Keyword(4) | Ohmic contact |
| Keyword(5) | Surface heating |
| 1st Author's Name | T. Aoki |
| 1st Author's Affiliation | Graduate School of Electronic Science and Technology, Shizuoka University() |
| 2nd Author's Name | H. Yamamoto |
| 2nd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 3rd Author's Name | Y. Aoki |
| 3rd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 4th Author's Name | Y. Nakanishi |
| 4th Author's Affiliation | Graduate School of Electronic Science and Technology, Shizuoka University:Research Institute of Electronics, Shizuoka University |
| 5th Author's Name | Y. Hatanaka |
| 5th Author's Affiliation | Graduate School of Electronic Science and Technology, Shizuoka University:Research Institute of Electronics, Shizuoka University |
| Date | 1999/1/21 |
| Paper # | EID98-88 |
| Volume (vol) | vol.98 |
| Number (no) | 549 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |