| Presentation | 1999/1/21 High Quality InGaN/GaN Single Heterostructures Grown by HWE With Mixed Source(Ga+In)Method CHU Shucheng, Tetsuhiro SAISHO, Shingo SAKAKIBARA, Fumiyasu TANOUE, Kazuo FUJIMURA, Kenei ISHINO, Akihiro ISHIDA, Hiroshi FUJIYASU, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | High quality InGaN/GaN single heterostructures were prepared by using a simple mixed sources(Ga and In metal)method in a hot wall epitaxy(HWE)system. Strong near band edge emission peaks ranging from 370 to 465 nm in room temperature PL spectra and X-rays rocking curve FWHM of InGaN(0002)as narrow as 7.3 arcmin were obtained. Few additional dislocations were produced at the interface of InGaN/GaN or during the growth of InGanN. In incorporation can be controlled independently by the substrate temperature, N_2 partial pressure, and the mixed source temperature, respectively. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InGaN / GaN / hot wall epitaxy / mixed source / photoluminescence / X-rays / indium / incorporation / NH_3 / N_2 |
| Paper # | EID98-87 |
| Date of Issue |
| Conference Information | |
| Committee | EID |
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| Conference Date | 1999/1/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electronic Information Displays (EID) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High Quality InGaN/GaN Single Heterostructures Grown by HWE With Mixed Source(Ga+In)Method |
| Sub Title (in English) | |
| Keyword(1) | InGaN |
| Keyword(2) | GaN |
| Keyword(3) | hot wall epitaxy |
| Keyword(4) | mixed source |
| Keyword(5) | photoluminescence |
| Keyword(6) | X-rays |
| Keyword(7) | indium |
| Keyword(8) | incorporation |
| Keyword(9) | NH_3 |
| Keyword(10) | N_2 |
| 1st Author's Name | CHU Shucheng |
| 1st Author's Affiliation | Faculty of Engineering, Shizuoka University() |
| 2nd Author's Name | Tetsuhiro SAISHO |
| 2nd Author's Affiliation | Faculty of Engineering, Shizuoka University |
| 3rd Author's Name | Shingo SAKAKIBARA |
| 3rd Author's Affiliation | Yamaha Co., |
| 4th Author's Name | Fumiyasu TANOUE |
| 4th Author's Affiliation | Yamaha Co., |
| 5th Author's Name | Kazuo FUJIMURA |
| 5th Author's Affiliation | Susuki Co. |
| 6th Author's Name | Kenei ISHINO |
| 6th Author's Affiliation | Faculty of Engineering, Shizuoka University |
| 7th Author's Name | Akihiro ISHIDA |
| 7th Author's Affiliation | Faculty of Engineering, Shizuoka University |
| 8th Author's Name | Hiroshi FUJIYASU |
| 8th Author's Affiliation | Faculty of Engineering, Shizuoka University |
| Date | 1999/1/21 |
| Paper # | EID98-87 |
| Volume (vol) | vol.98 |
| Number (no) | 549 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |