Presentation 1999/1/21
Preparation of ZnO Thin Films by Halide VPE
Naoyuki TAKAHASHI, Kazuhiko KAIYA, Kouji OMICHI, Takato NAKAMURA, Yoshimi MOMOSE, Hajime YAMAMOTO,
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Abstract(in English) Zinc oxide(ZnO)films were deposited on sapphire(0001)substrates by halide vapor phase epitaxy(VPE)using ZnCl_2 as a chloride source. Growth rate of the ZnO film increased with increasing growth temperature. The maximum growth rate was about 3 μm/h at 950℃. The X-ray diffractogram showed a typical pattern of epitaxially grown ZnO with a hexagonal structure, and a full width at half-maximum(FWHM)of 23.3 minutes was obtained in the X-ray diffraction profile. A strong band edge emission at 370.0 nm was observed at 20 K photoluminescence spectra.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) ZnO / epitaxial / halide-VPE / ZnCl_2 / O_2 / sapphire(0001) / ultraviolet-emission
Paper # EID98-85
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Committee EID
Conference Date 1999/1/21(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Preparation of ZnO Thin Films by Halide VPE
Sub Title (in English)
Keyword(1) ZnO
Keyword(2) epitaxial
Keyword(3) halide-VPE
Keyword(4) ZnCl_2
Keyword(5) O_2
Keyword(6) sapphire(0001)
Keyword(7) ultraviolet-emission
1st Author's Name Naoyuki TAKAHASHI
1st Author's Affiliation Department of Materials Science, Shizuoka University()
2nd Author's Name Kazuhiko KAIYA
2nd Author's Affiliation Department of Materials Science, Shizuoka University
3rd Author's Name Kouji OMICHI
3rd Author's Affiliation Department of Materials Science, Shizuoka University
4th Author's Name Takato NAKAMURA
4th Author's Affiliation Department of Materials Science, Shizuoka University
5th Author's Name Yoshimi MOMOSE
5th Author's Affiliation Research Institute of electronics, Shizuoka University
6th Author's Name Hajime YAMAMOTO
6th Author's Affiliation Department of electronics, Tokyo Engineering University
Date 1999/1/21
Paper # EID98-85
Volume (vol) vol.98
Number (no) 549
Page pp.pp.-
#Pages 4
Date of Issue