| Presentation | 1999/1/21 Surface Potential of Phosphor Under Low Energy Electron Irradiation H. Kominami, T. Aoki, Y. Nakanishi, Y. Hatanaka, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The surface potential of ZnS:Ag, Cl phosphor coated with In_2O_3 conducting layer under low energy electron excitation was investigated. The mesh electrode was fabricated on the phosphor sample, then, mesh and sample currents were measured as a function of mesh voltage. The mesh and sample currents changed abruptly at mesh voltage corresponding to the surface potential. The surface potential changed according with the weight of In[OCH(CH_3)_2]_3. It is suggested that the pronounced charging-up occurs at the excitation voltage lower than 200V in ZnS:Ag, Cl phosphor. It should be emphasized that this method was very effective for the measurement of surface potential. Moreover, the incident electron energy was increased with respect to the coating ratio. It indicated that the resistivity of the phosphor surface decreased by the coating process. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | FED / Low voltage CL / ZnS:Ag, Cl / Surface potential / Secondary electron yield |
| Paper # | EID98-80 |
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| Conference Information | |
| Committee | EID |
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| Conference Date | 1999/1/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electronic Information Displays (EID) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Surface Potential of Phosphor Under Low Energy Electron Irradiation |
| Sub Title (in English) | |
| Keyword(1) | FED |
| Keyword(2) | Low voltage CL |
| Keyword(3) | ZnS:Ag, Cl |
| Keyword(4) | Surface potential |
| Keyword(5) | Secondary electron yield |
| 1st Author's Name | H. Kominami |
| 1st Author's Affiliation | Graduate School of Electronic Science and Technology, Shizuoka University() |
| 2nd Author's Name | T. Aoki |
| 2nd Author's Affiliation | Graduate School of Electronic Science and Technology, Shizuoka University |
| 3rd Author's Name | Y. Nakanishi |
| 3rd Author's Affiliation | Graduate School of Electronic Science and Technology, Shizuoka University:Research Institute of Electronics, Shizuoka University |
| 4th Author's Name | Y. Hatanaka |
| 4th Author's Affiliation | Graduate School of Electronic Science and Technology, Shizuoka University:Research Institute of Electronics, Shizuoka University |
| Date | 1999/1/21 |
| Paper # | EID98-80 |
| Volume (vol) | vol.98 |
| Number (no) | 549 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |