Presentation 1998/6/25
Characteristics of laser-annealed polycrystalline silicon films
Yasuyoshi Mishima, Katsuyuki Suga, Fumiyo Takeuchi,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Excimer laser-annealed polycrystalline silicon (poly-Si) films have been investigated. The uniformity of these films was mainly determined by pulse-to-pulse laser energy fluctuations and beam profiles. The native oxide of a-Si films also influenced the surface roughness of poly-Si films. The fluctuation of crystallinity in the threshold region exerts a strong influence on the TFT characteristics. Because the crystallinity of laser-annealed poly-Si has a narrow threshold energy region, the improvement of the uniformity of the TFT characteristics is needed more exact control of crystallization parameters.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Excimer laser / crystallinity / grain size / surface roughness / uniformity
Paper # EID98-19
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Conference Information
Committee EID
Conference Date 1998/6/25(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Characteristics of laser-annealed polycrystalline silicon films
Sub Title (in English)
Keyword(1) Excimer laser
Keyword(2) crystallinity
Keyword(3) grain size
Keyword(4) surface roughness
Keyword(5) uniformity
1st Author's Name Yasuyoshi Mishima
1st Author's Affiliation Fujitsu laboratories Ltd. Electron Devices and Materials Lab. LCD Lab.()
2nd Author's Name Katsuyuki Suga
2nd Author's Affiliation Fujitsu laboratories Ltd. Electron Devices and Materials Lab. LCD Lab.
3rd Author's Name Fumiyo Takeuchi
3rd Author's Affiliation Fujitsu laboratories Ltd. Electron Devices and Materials Lab. LCD Lab.
Date 1998/6/25
Paper # EID98-19
Volume (vol) vol.98
Number (no) 151
Page pp.pp.-
#Pages 6
Date of Issue