| Presentation | 1998/10/23 High-luminance Zn_2Si_<1-x>Ge_xO_4 : Mn thin-film electroluminescent devices using a thick ceramic sheet insulating layer Toshihiro MIYATA, Yoshihiro KUBOTA, Tadatsugu MINAMI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | High-luminance green-emitting TFEL devices have been fabricated using a Zn_2Si_<1-x>Ge_xO_4 : Mn multicomponent oxide phosphor thin-film emitting layer and a thick ceramic sheet insulating layer. The highest luminance and luminous efficiency, and lowest threshold voltage were obtained in deveices using Zn_2Si_<1-x>Ge_xO_4 : Mn thin films prepared with a Ge content of x=0.25, 0.3, and 0.5, respectively : luminance of 4220 cd/m^2, luminous efficiency of 2.53 lm/W, and threshold voltage of 50V, when driven at 1 kHz. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | electoluminescence / rf magnetron sputtering / multicomponent oxide phosphor / TFEL device / Zn_2Si_<1-x>Ge_xO_4 phosphor / phosphor |
| Paper # | EID98-59 |
| Date of Issue |
| Conference Information | |
| Committee | EID |
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| Conference Date | 1998/10/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electronic Information Displays (EID) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High-luminance Zn_2Si_<1-x>Ge_xO_4 : Mn thin-film electroluminescent devices using a thick ceramic sheet insulating layer |
| Sub Title (in English) | |
| Keyword(1) | electoluminescence |
| Keyword(2) | rf magnetron sputtering |
| Keyword(3) | multicomponent oxide phosphor |
| Keyword(4) | TFEL device |
| Keyword(5) | Zn_2Si_<1-x>Ge_xO_4 phosphor |
| Keyword(6) | phosphor |
| 1st Author's Name | Toshihiro MIYATA |
| 1st Author's Affiliation | Electron Device System Laboratory, Kanazawa Institute of Technology() |
| 2nd Author's Name | Yoshihiro KUBOTA |
| 2nd Author's Affiliation | Electron Device System Laboratory, Kanazawa Institute of Technology |
| 3rd Author's Name | Tadatsugu MINAMI |
| 3rd Author's Affiliation | Electron Device System Laboratory, Kanazawa Institute of Technology |
| Date | 1998/10/23 |
| Paper # | EID98-59 |
| Volume (vol) | vol.98 |
| Number (no) | 354 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |