| Presentation | 1994/2/18 Submicron channel Amorphous-Silicon Thin-Film Transistors Chang-Dong Kim, Masakiyo Matsumura, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Characteristics were investigated for short channel a-Si TFTS. Since their parasitic resistance has been reduced by selective excimer-laser crystallization of the source and drain Si regions, the mobility decreased only slowly with the gate length from about 0.63cm^2, Vs for the 15μm-long TFT to about 0.42cm^2/Vs for the 0. 5μm-long TFT.Both the sub-threshold voltage swing and threshold vo ltage depended slightly on the gate length. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | a-Si / TFT / short channel / excimer-laser / selective recrystallization |
| Paper # | EID93-136,ED93-190,SDM93-213 |
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| Conference Information | |
| Committee | EID |
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| Conference Date | 1994/2/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Electronic Information Displays (EID) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Submicron channel Amorphous-Silicon Thin-Film Transistors |
| Sub Title (in English) | |
| Keyword(1) | a-Si |
| Keyword(2) | TFT |
| Keyword(3) | short channel |
| Keyword(4) | excimer-laser |
| Keyword(5) | selective recrystallization |
| 1st Author's Name | Chang-Dong Kim |
| 1st Author's Affiliation | Department of Physical Electronics Faculty of Engineering,Tokyo Institute of Technology() |
| 2nd Author's Name | Masakiyo Matsumura |
| 2nd Author's Affiliation | Department of Physical Electronics Faculty of Engineering,Tokyo Institute of Technology |
| Date | 1994/2/18 |
| Paper # | EID93-136,ED93-190,SDM93-213 |
| Volume (vol) | vol.93 |
| Number (no) | 471 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |