Presentation 1994/2/18
Bottom-Gate Poly-Si TFT Fabricated by Excimer laser Annealling
Tatsuo Yoshioka, Mamoru Furuta, Tetsuya Kawamura, Yutaka Miyata,
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Abstract(in English) Bottom-gate poly-Si TFTs have been successfully fabricated on a hard glass substrate using XeCl excimer laser annealing and non- mass-separated ion doping techniques.We used an a-Si:H film deposited by plasma enhanced chemical vapor deposition(PECVD)on SiN_xas a precursor film.The bottom-gate structure might allow us to use as many conventional a-Si TFT fabrication process as possible to realize poly-Si TFTS.By using excimer laser annealing and ion doping,we have obtained excellent TFTS,field effect mobility of 200 cm]2], V.s.Also we have demonstrated the threshold voltage control method using a channel doping technique.
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Keyword(in English) Poly-Si / TFT / Bottom-Gate / Eximer / laser
Paper # EID93-134,ED93-188,SDM93-211
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Committee EID
Conference Date 1994/2/18(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) Bottom-Gate Poly-Si TFT Fabricated by Excimer laser Annealling
Sub Title (in English)
Keyword(1) Poly-Si
Keyword(2) TFT
Keyword(3) Bottom-Gate
Keyword(4) Eximer
Keyword(5) laser
1st Author's Name Tatsuo Yoshioka
1st Author's Affiliation LCD Development Center,Matsushita Electric Industrial Co.,LTD()
2nd Author's Name Mamoru Furuta
2nd Author's Affiliation LCD Development Center,Matsushita Electric Industrial Co.,LTD
3rd Author's Name Tetsuya Kawamura
3rd Author's Affiliation LCD Development Center,Matsushita Electric Industrial Co.,LTD
4th Author's Name Yutaka Miyata
4th Author's Affiliation LCD Development Center,Matsushita Electric Industrial Co.,LTD
Date 1994/2/18
Paper # EID93-134,ED93-188,SDM93-211
Volume (vol) vol.93
Number (no) 471
Page pp.pp.-
#Pages 6
Date of Issue