| Presentation | 1994/2/18 Phase transformation of amorphous silicon by excimer laser annealing and its application to thin film transtors Naoto Kusumoto, Nobuo Kubo, Shunpei Yamazaki, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The phase transformation of amorphous silicon by excimer laser annealing is investigated by ellipsometry,Raman spectra and SEM. The surface roughness is the measure of the crystal growth,and the increase of the roughness and the phase transition to polycrystalline-Si are detected by the Raman intensity.There is a good relation between the field effect mobility and the Raman intensity,but the grain size is out of proportion to the mobility. When the laser intensity exceeds the certain value,the a-Si film shows the ablation effect and it is seen that the incubation period is necessary to start the crystal growth.The incubated films become the poly-Si with high mobility and some large grain size. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Thin film transistors / Polycrystalline-Si / Raman spectra / Ellipsometry / Grain growth / Excimer laser annealing |
| Paper # | EID93-132,ED93-186,SDM93-209 |
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| Conference Information | |
| Committee | EID |
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| Conference Date | 1994/2/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electronic Information Displays (EID) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Phase transformation of amorphous silicon by excimer laser annealing and its application to thin film transtors |
| Sub Title (in English) | |
| Keyword(1) | Thin film transistors |
| Keyword(2) | Polycrystalline-Si |
| Keyword(3) | Raman spectra |
| Keyword(4) | Ellipsometry |
| Keyword(5) | Grain growth |
| Keyword(6) | Excimer laser annealing |
| 1st Author's Name | Naoto Kusumoto |
| 1st Author's Affiliation | Semiconductor Energy Laboratory() |
| 2nd Author's Name | Nobuo Kubo |
| 2nd Author's Affiliation | Semiconductor Energy Laboratory GTC |
| 3rd Author's Name | Shunpei Yamazaki |
| 3rd Author's Affiliation | Semiconductor Energy Laboratory |
| Date | 1994/2/18 |
| Paper # | EID93-132,ED93-186,SDM93-209 |
| Volume (vol) | vol.93 |
| Number (no) | 471 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |